International Workshop on High-Resolution Depth Profiling
Bar Harbor, Maine, May 23 - 26, 2005
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
 |
PROGRAM
Please download this Workshop Program in .pdf format here
May 23rd (Monday morning)
9:00 - 9:15 OPENING
Session A: J. O'Connor (chair)
9:15 - 10:00 Issues and Opportunities and the Organic/Inorganic Interface (invited), R. Tromp
10:00 - 10:45 Influence of strain on radiation damage studied by high-resolution RBS (invited),
T. Matsushita, K. Nakajima, M. Suzuki, K. Kimura, A. Agarwal, H.-J. Gossmann, and M. Ameen
10:45 - 11:15 COFFEE BREAK
Session B: P. Woodruff (chair)
11:15 - 12:00 Ultra high resolution heavy ion ERD and its application in the field of future microelectronic materials (invited),
A. Bergmaier and G. Dollinger
12:00 - 12:30 Transport and exchange of hydrogen isotopes in silicon-device-related stacks, E. P. Gusev, C. Krug, E. Cartier and T. Zabel
12:30 - 14:00 LUNCH
May 23rd (Monday afternoon)
Session C: L. Feldman (chair)
14:00 - 14:45 High resolution profiling using nuclear resonant reactions (invited), I.J.R. Baumvol and R.P. Pezzi
14:45 - 15:15 Epitaxial Oxide Films Grown on Si Studied by Medium Energy Ion Scattering, L.V. Goncharova, D. Starodub, E. Garfunkel and T. Gustafsson
15:15 - 15:45 COFFEE BREAK
Session D: D. W. Moon (chair)
15:45 - 16:30 Ab-initio calculations of the surface peak (invited), P. L. Grande, A. Hentz, and G. Schiwietz
16:30 - 17:00 Absolute Yield Measurements in the Medium Energy Regime, P. Bailey and T. C. Q. Noakes
17:00 - 18:00 Poster session
Initial stage of Pd adsorption on Ni(111) studied by low energy ion scattering, K. Umezawa, S. Nakanishi, and W. M. Gibson
Trends in the structures of two-dimensional rare earth silicides on Si(111) investigated using medium-energy ion scattering, T.J. Wood, I.M. Scott, D.J. Spence, C. Bonet, T.C.Q. Noakes, P. Bailey and S.P. Tear
Medium-energy ion scattering investigation of neodymium silicide on Si(111), T.J. Wood , C. Bonet, T.C.Q. Noakes , P. Bailey and S.P. Tear
Medium-energy ion scattering investigation of two-dimensional YSi2 grown on Si(111), T.J. Wood, C. Bonet, T.C.Q. Noakes, P. Bailey and S.P. Tear
Interfacial Characteristics of High Dielectric Thin Films By Means of MEIS Analysis, M.- H. Cho, K. B. Chung, D. W. Moon, D. W. Lee, D.-H. Ko, and C. N. Whang
Adsorption structure determination of C2H4 on Si(001) surface by low-energy ion-scattering spectroscopy, K. H. Chae, J. H. Seo, J. Y. Park, C. N. Whang, S. S. Kim, and D. S. Choi
May 24th (Tuesday morning)
Session E: P. Bailey (chair)
9:00 - 9:45 Surface Structure Analysis by Low and Medium Energy Ion Scattering (invited), Y. Kido, Ritsumeikan University
9:45 - 10:30 MEIS as a probe of Adsorbate Induced Segregation at Bimetallic Surfaces (invited), T. E. Jones, T. G. Owens, A. Trant, C. J. Baddeley, T.C.Q. Noakes and P. Bailey
10:30 - 11:00 COFFEE BREAK
Session F: M. Copel (chair)
11:00 - 11:45 Probing Surface Reconstructions with MEIS (invited), D.P. Woodruff, M.A. Muñoz-Márquez, G.S. Parkinson, P.D. Quinn and M. Gladys
11:45 - 12:15 Surface Structure of Sphalerite with MEIS, R. Kolarova, S. Harmer, L. Goncharova, W.N. Lennard, M.A.M. Marquez, H.W. Nesbitt and I.V. Mitchell
12:15 - 12:45 Medium-energy ion scattering investigation of three-dimensional holmium silicide grown on Si(111), T.J. Wood, C. Bonet, T.C.Q. Noakes, P. Bailey
and S.P. Tear
12:45 - 14:00 LUNCH
May 24th (Tuesday afternoon)
Session G: Y. Kido (chair)
14:00 - 14:45 The application of high resolution ion scattering to aperiodic quasicrystalline materials (invited), T.C.Q. Noakes, P. Bailey, J. Smerdon, J. Ledieu, R. McGrath,C. F. McConville, C.R. Parkinson, A.R. Ross and T.A. Lograsso
14:45 - 15:30 Diffusion in Surface Alloys and Quasicrystals (invited), D.J. O'Connor, Y.G. Shen, M. Gladys, F. Samavat, L. Zhu, B.V.King, A. Hoffman
15:30 - 16:00 COFFEE BREAK
Session H: W. N. Lennard (chair)
16:00 - 16:30 Development of a low energy atom scattering system, K. Umezawa, S. Nakanishi, E. Narihiro, K. Oda, and W. M. Gibson
16:30 - 17:00 Thermal activation of As implanted in bulk-Si and SIMOX, M. Dalponte, H. Boudinov, L. V. Goncharova, D. Starodub, E. Garfunkel and T. Gustafsson
17:00 - 17:30 Damage Accumulation and Dopant Migration during Shallow As and Sb Implantation into Si, J. A. van den Berg, M. Werner, D. G. Armour, P. Bailey and T. C. Q. Noakes
17:30 - 18:00 Development of three-dimensional medium-energy ion scattering, T. Kobayashi and S. Shimoda
May 25th (Wednesday)
Session I: I. Baumvol (chair)
9:00 - 9:45 In-situ MEIS studies on the initial growth stage of gate dielectric thin films (invited), Dae Won Moon and Man-ho Cho
9:45 - 10:30 Composition and diffusion in high-K dielectric films (invited), L. Goncharova, D. Starodub, R. Barnes, T. Gustafsson, E. Garfunkel, G. Bersuker, B. Foran, and P. Lysaght
10:30 - 11:00 COFFEE BREAK
Session J: K. Kimura (chair)
11:00 - 11:45 Materials interactions of metal oxide dielectrics (invited), Matt Copel
11:45 - 12:15 Pressure dependence of NH3 Nitridation of HfO2 and Hafnium Silicates thin films, J.-J. Ganem, I. Trimaille and E. P. Gusev
12:15 - 12:45 Depth Distribution Measurements of N and O in Ultrathin Silicon Oxynitrides, W. N. Lennard, L. Goncharova, G. Mount and R. Kolarova
12:45 - 14:00 LUNCH
14:00 - 18:00 EXCURSION
19:00 - 21:00 CONFERENCE DINNER
May 26th (Thursday)
Session K: E. Garfunkel (chair)
9:00 - 9:45 Semiconductor-Dielectric Interfaces: Interface Composition and Structure (invited), L. C. Feldman , S. Dhar, J. R. Williams, L. Porter, J. Bentley, K.-C. Chang, and Y. Cao
9:45 - 10:15 Synthesis and Characterization of Oxide Electrolyte Nanostructures for Fast Oxygen Ionic Conduction , V. Shutthanandan, S. Thevuthasan, L. Saraf, S. Azad, O. A. Marina, M. Engelhard, C.M. Wang, Y. Zhang, A. El-Azab, and P. Nachimuthu
10:15 - 10:45 COFFEE BREAK
Session L: P. Grande (chair)
10:45 - 11:15 Thermal annealing effect on InAs/GaAs quantum dots studied by ion channeling, H. Niu, C.H Chen, H.Y Wang, S.C. Wu and C. P. Lee
11:15 - 11:45 High sensitivity RBS detection of Carbon and Oxygen in ultra-thin HfO2 films deposited on Silicon by Atomic Layer Deposition technique, L. S. Wielunski, Y. J. Chabal, Y. Wang, M.-T. Ho and J. E. Reyes
For More
Information
Contact:
Torgny Gustafsson
gustaf@physics.rutgers.edu
Matt Copel
mcopel@us.ibm.com