International Workshop on High-Resolution Depth Profiling
Bar Harbor, Maine, May 23 - 26, 2005

  "MEIS as a probe of adsorbate induced segregation at bimetallic surfaces"
  Chris Baddeley, St. Andrews, UK

  "Subnanometric resolution profiling using nuclear resonant reactions"
  Israel Baumvol, Porto Alegre, Brazil

  "Ultra high resolution heavy ion ERD and its application in the field of future microelectronic materials"
  Andreas Bergmaier, Munich, Germany

  "Materials interactions of metal oxide dielectrics"
  Matt Copel, IBM, Yorktown Heights, US

  "Semiconductor-Dielectric Interfaces: Interface Composition and Structure"
  Len Feldman, Vanderbilt University, US

  "Ultrathin film and interface chemistry of post-Si microelectronic materials"
  Eric Garfunkel, Rutgers University, US

  "Ab-initio calculations of the surface peak"
  Pedro Grande, Porto Alegre, Brazil

  "Surface structure analysis by low and medium energy ion scattering"
  Yoshiaki Kido, Ritsumeikan, Japan

  "Influence of strain on radiation damage studied by high-resolution RBS"
  Kenji Kimura, Kyoto, Japan

  "In-situ MEIS studies on the initial growth stage of gate dielectric thin films"
  Dae-won Moon, Taejon, Korea

  "The application of high resolution ion scattering to aperiodic quasicrystalline materials"
  Tim Noakes, Daresbury, UK

  "Diffusion in Surface Alloys and Quasicrystals"
  John O'Connor, Newcastle, Australia

  "Issues and Opportunities and the Organic/Inorganic Interface"
  Ruud Tromp, IBM, Yorktown Heights, US

  "Probing surface reconstructions with MEIS"
  Phil Woodruff, Warwick, UK

    For More
    Information
    Contact:

  Torgny Gustafsson
  gustaf@physics.rutgers.edu

  Matt Copel  
  mcopel@us.ibm.com