Sensing spin and spinning memory
A chiral-based spin sensors and magnetic memory
devices without a permanent magnet.
Yossi Paltiel, Applied physics department,
Center for nano
science and nano technology,
The
Several technologies
are currently in use for computer memory devices. However, there is a need for
a universal memory device that has high density, high speed and low power requirements.
To this end, various types of magnetic-based technologies with a permanent magnet
have been proposed. Recent charge-transfer studies indicate that chiral
molecules act as an efficient spin filter.
We utilize this
effect to achieve a proof of concept for anew type of chiral-based
magnetic-based Si-compatible universal memory device without a permanent
magnet. More specifically, we use spin-selective charge transfer through a self-assembled
monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization
corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The
readout is achieved using low currents. The presented technology has the
potential to overcome the limitations of other magnetic-based memory
technologies to allow fabricating inexpensive, high-density universal
memory-on-chip devices.
In the talk I will present our the nano tool box and show studies of
charge transfer, spin transfer and energy transfer in the hybrid layers as well
as collective transfer phenomena. These enable the realization of room
temperature operating quantum electro optical devices. For example I will
present in details, our recent development of a new type of chiral molecules based
magnetless universal memory exploiting selective spin transfer.