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Publications (click for access)

• V. Bruevich, L. Kasaei, L. C. Feldman, V. Podzorov, "Direct Writing of Metal Nanostructures with Focused Helium Ion Beams", Electron. Mater. 5(4), 293-302 (2024). DOI:10.3390/electronicmat5040018
  
• V. Bruevich, Y. Patel, J. P. Singer, V. Podzorov, "Significant Joule self-heating pervasive in the emergent thin-film transistor studies", J. Mater. Chem. C, DOI:10.1039/D4TC02612H (2024).
  
• V. Bruevich and V. Podzorov, "Reporting Hall effect measurements of charge carrier mobility in emerging materials", Nat. Electron. 7, 510–512 (2024). DOI:10.1038/s41928-024-01198-w
  
• V. Bruevich and V. Podzorov, "Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials", Nat. Electron. 7, 266–268 (2024). DOI:10.1038/s41928-024-01154-8
  
• B. Adilbekova et al., "Enhancing the Electrical Conductivity and Long-Term Stability of PEDOT:PSS Electrodes through Sequential Treatment with Nitric Acid and Cesium Chloride", Adv. Mater. 36, 2405094 (2024). DOI:10.1002/adma.202405094
  
• S. Sreekumar, V. Bruevich, V. Podzorov, D. M. O’Carroll, "ZnO/Ag/ZnO multilayers as an n-type transparent conducting electrode for transparent organic light-emitting diodes", Appl. Surf. Sci. 670, 160596 (2024). DOI:10.1016/j.apsusc.2024.160596
  
• V. Bruevich et al., "Intrinsic (Trap-free) Transistors Based on Epitaxial Single-crystal Perovskites", Adv. Mater., DOI:10.1002/adma.202205055 (2022).
  
• N. Vagenas, V. Podzorov, P. Kounavis, "Modulated-photocurrent spectroscopy of single-crystal organic semiconductor rubrene with pristine and trap-dominated surfaces", Phys. Rev. Mater. 5, 063801, DOI:10.1103/PhysRevMaterials.5.063801 (2021).
  
• A. K. Grebenko et al., "High-Quality Graphene Using Boudouard Reaction", Adv. Science. 9, 2200217, DOI:10.1002/advs.202200217 (2022).
  
• A. K. Grebenko et al., "Local ultra-densification of single-walled carbon nanotube films: Experiment and mesoscopic modeling", Carbon 196, 979-987, DOI:10.1016/j.carbon.2022.05.047 (2022).
  
• A. Grebenko et al., "Green Lithography for Delicate Materials", Adv. Funct. Mater., DOI:10.1002/adfm.202101533 (2021).
  
• Z. Liang, H. H. Choi, X. Luo et al., "n-type charge transport in heavily p-doped polymers", Nature Mater. 20, 518-524 (2021).
  
• V. Bruevich, H. H. Choi, V. Podzorov, "The Photo-Hall Effect in High-Mobility Organic Semiconductors", Adv. Funct. Mater., DOI:10.1002adfm.202006178 (2020).
  
• H. H. Choi, H. T. Yi, J. Tsurumi, J. J. Kim, A. L. Briseno, S. Watanabe, J. Takeya, K. Cho, V. Podzorov, "A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study", Adv. Science, 1901824 (2019).
  
• H. H. Choi, A. F. Paterson, M. A. Fusella, J. Panidi, O. Solomeshch, N. Tessler, M. Heeney, K. Cho, T. D. Anthopoulos, B. P. Rand and V. Podzorov, "Hall Effect in Polycrystalline Organic Semiconductors: The Effect of Grain Boundaries", Adv. Funct. Mater., 1903617 (2019).
  
• H. T. Yi, S. Rangan, B. Tang, C. D. Frisbie, R. A. Bartynski, Y. N. Gartstein and V. Podzorov, "Electric-field effect on photoluminescence of lead-halide perovskites", Materials Today, DOI: 10.1016/j.mattod.2019.01.003 (2019).
  
• H. T. Yi, P. Irkhin, P. P. Joshi, Y. N. Gartstein, X. Zhu and V. Podzorov, "Experimental Demonstration of Correlated Flux Scaling in Photoconductivity and Photoluminescence of Lead-Halide Perovskites", Phys. Rev. Applied 10, 054016, DOI: 10.1103/PhysRevApplied.10.054016 (2018).
  
• H. H. Choi, Y. I. Rodionov, A. F. Paterson, J. Panidi, D. Saranin, N. Kharlamov, S. I. Didenko, T. D. Anthopoulos, K. Cho and V. Podzorov, "Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors", Adv. Funct. Mater., DOI: 10.1002/adfm.201707105 (2018).
  
• H. H. Choi, K. Cho, C. D. Frisbie, H. Sirringhaus and V. Podzorov, "Critical assessment of charge mobility extraction in FETs", Nature Mater. 17, 2-7, DOI: 10.1038/nmat5035 (2018).
  
• H. H. Choi, H. Najafov, N. Kharlamov, D. V. Kuznetsov, S. I. Didenko, K. Cho, A. L. Briseno and V. Podzorov, "Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors", ACS Appl. Mater. & Interfaces 9, 34153-34161, DOI: 10.1021/acsami.7b11134 (2017).
  
• M. A. Fusella, S. Yang, K. Abbasi, H. H. Choi, Z. Yao, V. Podzorov, A. Avishai, B. P. Rand, "Use of an Underlayer for Large Area Crystallization of Rubrene Thin Films", Chem. Mater. 29, 6666-6673, DOI: 10.1021/acs.chemmater.7b01143 (2017).
  
• L. Carman, H. P. Martinez, L. Voss, S. Hunter, P. Beck, N. Zaitseva, P. Irkhin, H. H. Choi, V. Podzorov, S. Payne, "Solution-grown rubrene crystals as radiation detecting devices", IEEE Transactions on Nuclear Science 64, 781-788 DOI: 10.1109/TNS.2017.2652139 (2017).
  
• R. Fujimoto, S. Watanabe, Y. Yamashita, J. Tsurumi, H. Matsui, T. Kushida, C. Mitsui, H. T. Yi, V. Podzorov, J. Takeya, "Control of molecular doping in conjugated polymers by thermal annealing", Organic Electron. 47, 139-146 DOI: 10.1016/j.orgel.2017.05.019 (2017).
  
• Y. Chen, H. T. Yi, X. Wu, R. Haroldson, Y. N. Gartstein, Y. I. Rodionov, K. S. Tikhonov, A. Zakhidov, X.-Y. Zhu, V. Podzorov, "Extended carrier lifetimes and diffusion lengths in hybrid perovskites revealed by steady-state Hall effect and photoconductivity measurements", Nature Comm. 7, DOI: 10.1038/ncomms12253 (2016).
  
• H. T. Yi, X. Wu, X.-Y. Zhu, V. Podzorov, "Intrinsic charge transport across phase transitions in hybrid organo-inorganic perovskites", Adv. Mater. 28, 6509-6514, DOI: 10.1002/adma.201600011 (2016).
  
• H. T. Yi, Y. N. Gartstein, V. Podzorov, "Charge carrier coherence and Hall effect in organic semiconductors", Sci. Reports 6, DOI: 10.1038/srep23650 (2016).
  
• Y. Chen, H. T. Yi, V. Podzorov, "High-Resolution ac Measurements of the Hall Effect in Organic Field-Effect Transistors", Phys. Rev. Applied 5, 034008 (2016).
  
• B. Fraboni, A. Fraleoni-Morgera, Y. Geerts, A. Morpurgo, V. Podzorov, "Organic Single Crystals: An Essential Step to New Physics and Higher Performances of Optoelectronic Devices", Adv. Funct. Mater. 26, 2229 (2016).
  
• X.-Y. Zhu, V. Podzorov, "Charge carriers in hybrid organic-inorganic lead halide perovskites might be protected as large polarons", J. Phys. Chem. Lett. 6, 4758 (2015).
  
• A. K. Hailey, S.-Y. Wang, Y. Chen, M. M. Payne, J. E. Anthony, V. Podzorov, Y.-L. Loo, "Quantifying the energy barriers and elucidating the charge transport mechanisms across interspherulite boundaries in solution-processed organic semiconductor thin films", Adv. Funct. Mater. 25, 5662-5668 (2015).
  
• H. T. Yi, Z. Chen, A. Facchetti and V. Podzorov, "Solution-processed crystalline n-type organic transistors stable against electrical stress and photo-oxidation", Adv. Funct. Mater. 26, 2365-2370 DOI: 10.1002/adfm.201502423 (2015).
  
• P. Irkhin, H. Najafov and V. Podzorov, "Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors", Nature Sci. Reports 5, 15323, DOI: 10.1038/srep15323 (2015).
  
• D. D. T. Mastrogiovanni, J. Mayer, A. S. Wan, A. Vishnyakov, A. V. Neimark, V. Podzorov, L. C. Feldman, E. Garfunkel, "Oxygen Incorporation in Rubrene Single Crystals", Sci. Reports 4, 4753, DOI: 10.1038/srep04753 (2014).
  
• H. T. Yi, B. Gao, W. Xie, S-W. Cheong and V. Podzorov, "Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating", Nature Sci. Reports 4, 6604, DOI: 10.1038srep06604 (2014).
  
• B. Lee, Y. Chen, A. Cook, A. Zakhidov and V. Podzorov, "Stable doping of carbon nanotubes with molecular self-assembly", Appl. Phys. Lett. 116, 144503 (2014).
  
• B. Lee, Y. Chen, D. Fu, H. T. Yi, K. Czelen, H. Najafov and V. Podzorov, "Trap healing and ultralow-noise Hall effect at the surface of organic semiconductors", Nature Mater. 12, 1125-1129 (2013).
• V. Podzorov, "Conjugated polymers: long and winding polymeric roads", Nature Mater. 12, 947-948 (2013).
• V. Podzorov "Organic single crystals: Addressing the fundamentals of organic electronics" MRS Bulletin 38, 15-24 DOI:10.1557/mrs.2012.306 (2013).
• H. T. Yi, M. M. Payne, J. E. Anthony and V. Podzorov "Ultra-flexible solution-processed organic field-effect transistors" Nature Commun. DOI 10.1038 ncomms2263 (2012).
• Y. Chen, B. Lee, H. T. Yi, S. S. Lee, M. M. Payne, S. Pola, C.-H. Kuo, Y.-L. Loo, J. E. Anthony, Y. T. Tao and V. Podzorov, "Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors", Phys. Chem. Chem. Phys. DOI: 10.1039/C2CP41823A, (2012).
• Y. Chen and V. Podzorov, "Bias stress effect in "air-gap" organic field-effect transistors", Adv. Mater. 24, 2679-2684 (2012).
• H. T. Yi, Y. Chen, K. Czelen, V. Podzorov, "Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors", Adv. Mater. 23, 5807-5811 (2011).
• Y. Chen, B. Lee, D. Fu, V. Podzorov, "The origin of a 650 nm photoluminescence band in rubrene", Adv. Mater. 23, 5370-5375 (2011).
• H. Najafov, D. Mastrogiovanni, E. Garfunkel, L. C. Feldman and V. Podzorov, "Photon-assisted oxygen diffusion and oxygen-related traps in organic semiconductors", Adv. Mater. 23, 981 (2011).
• D. J. Ellison, B. Lee, V. Podzorov and C. D. Frisbie, "Surface potential mapping of SAM-functionalized organic semiconductors by Kelvin Probe Force Microscopy", Adv. Mater. 23, 502 (2011).
• H. Najafov, B. Lee, Q. Zhou, L. C. Feldman and V. Podzorov, "Observation of long-range exciton diffusion in highly ordered organic semiconductors", Nature Mater. 9, 938 (2010).
• V. Podzorov, "p-electron systems: building molecules for a function", Nature Mater. 9, 616 (2010).
• B. Lee, A. Wan, D. Mastrogiovanni, J. E. Anthony, E. Garfunkel and V. Podzorov, "Origin of the bias stress instability in organic field-effect transistors", Phys. Rev. B 82, 085302 (2010).
• B. Lee, Y. Chen, F. Duerr, D. Mastrogiovanni, E. Garfunkel, E. Y. Andrei and V. Podzorov, "Modification of electronic properties of graphene with self-assembled monolayers", Nano Lett. 10, 2427-2432 (2010).
• O. Khatib, B. Lee, J. Yuen, Z. Q. Li, M. Di Ventra, A. J. Heeger, V. Podzorov, and D. N. Basov "Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules" J. Appl. Phys. 107, 123702 (2010).
• H. Najafov, B. Lyu, I. Biaggio and V. Podzorov "Two mechanisms of exciton dissociation in rubrene single crystals" Appl. Phys. Lett. 96, 183302 (2010).
• B. Lee, T.-J. Choi, S.-W. Cheong and V. Podzorov, "Nanoscale Conducting Channels at the Surface of Organic Semiconductors Formed by Decoration of Molecular Steps with Self-Assembled Molecules", Adv. Funct. Mater. 19, 3726 (2009).
• C.-Y. Kao, B. Lee, L. S. Wielunski, M. Heeney, I. McCulloch, E. Garfunkel, L. C. Feldman and V. Podzorov, "Doping of conjugated polythiophenes with alkyl silanes", Adv. Funct. Mater. 19, 1 (2009).
• M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, "Electronic functionalization of the surface of organic semiconductors with self-assembly monolayers", Nature Mater. 7, 84 (2008).
• M. F. Calhoun, C. Hsieh and V. Podzorov, "Effect of shallow traps on polaron transport at the surface of organic semiconductors", Phys. Rev. Lett. 98, 096402 (2007).
• S. Subramanian, S. K. Park, S. R. Parkin, V. Podzorov, T. N. Jackson and J. E. Anthony, "Chromophore Fluorination Enhances Crystallization and Stability of Soluble Anthradithiophene Semiconductors", JACS 130, 2706 (2008).
• M. M. Qazilbash, Z. Q. Li, V. Podzorov, M. Brehm, F. Keilmann, B. G. Chae, H. T. Kim, and D. N. Basov, "Electrostatic modification of infrared response in gated structures based on VO2", Appl. Phys. Lett. 92, 241906 (2008).
• Z. Li, V. Podzorov, N. Sai, M. C. Martin, M. E. Gershenson, M. Di Ventra and D. N. Basov, "Light quasiparticles dominate the electronic transport in molecular crystal field-effect transistors", Phys. Rev. Lett. 99, 016403 (2007).
• M. E. Gershenson, V. Podzorov, A. F. Morpurgo, "Colloquium: Electronic Transport in Single-Crystal Organic Transistors", invited review, Rev. Mod. Phys. 78, 973 (2006).
• V. Podzorov et al., "Hall effect in the accumulation layers on the surface of organic semiconductors", Phys. Rev. Lett. 95, 226601 (2005).
• E. Menard, A. Marchenko, V. Podzorov, M. E. Gershenson, D. Fichou, J. A. Rogers, "Nanoscale surface morphology and rectifying behavior of a bulk single-crystal organic semiconductor", Adv. Mater. 18, 1552 (2006).
• V. Podzorov and M. E. Gershenson, "Photo-induced charge transfer across the interface between organic molecular crystals and polymers", Phys. Rev. Lett. 95, 016602-1 (2005).
• V. Podzorov et al., "Interaction of organic surfaces with active species in the high-vacuum environment", Appl. Phys. Lett. 87, 093505 (2005).
• H. Najafov, I. Biaggio, V. Podzorov, M. F. Calhoun, M. E. Gershenson, "Primary Photoexcitations and the origin of photo-current in rubrene single crystals", Phys. Rev. Lett. 96, 056604 (2006).
• Z. Rang et al., "Hydrostatic pressure dependence of charge carrier transport in the single-crystal rubrene devices", Appl. Phys. Lett. 86, 123501 (2005).
• V. Podzorov, "Charge carrier transport in single-crystal organic field-effect transistors", in Organic Field-Effect Transistors, Ed. Z. Bao and J. Locklin, pp. 27-72 (Taylor & Francis, 2007). [pdf]
• R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo and V. Podzorov, "Organic single-crystal field-effect transistors", in Physics of Organic Semiconductors, Ed. W. Brutting, pp. 393-432 (Wiley-VCH, 2005).
• V. Podzorov et al., "Light-induced switching in back-gated organic transistors with built-in conduction channel", Appl. Phys. Lett. 85, 6039 (2004).
• E. Menard, V. Podzorov, S.-H. Hur, A. Gaur, M. E. Gershenson and J. A. Rogers, "High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics", Adv. Mater. 16, 2097 (2004)
• V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers and M. E. Gershenson, "Intrinsic charge-carrier transport on the surface of organic semiconductors", Phys. Rev. Lett. 93, 086602 (2004).
• R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, V. Podzorov, review paper "Organic single-crystal field-effect transistors", Phys. Stat. Solidi (a), 201, 1302 (2004).
• V. Podzorov, M. E. Gershenson, Ch. Kloc, R. Zeis, and E. Bucher "High mobility ambipolar field-effect transistors based on transition metal dichalcogenides", Appl. Phys. Lett. 84, 3301 (2004).
• V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, M. E. Gershenson and J. A. Rogers "Mobility Anisotropy in Rubrene Single Crystals Probed by Monolithic Elastomeric Stamps", Science 303, 1644 (2004).
• V. Podzorov, et al. "Single-crystal organic field effect transistors with the hole mobility ~ 8 cm2/Vs" Appl. Phys. Lett. 83, 3504 (2003).
• V. Podzorov, V. M. Pudalov and M. E. Gershenson "Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator" Appl. Phys. Lett. 82, 1739 (2003).
• V. Podzorov, B. G. Kim, V. Kiryukhin, M. E. Gershenson and S-W. Cheong "Martensitic accommodation strain and the metal-insulator transition in manganites" Phys. Rev. B 64, 140406(R) (2001).
• V. Podzorov, C. H. Chen, M. E. Gershenson and S-W. Cheong, "Mesoscopic, Non-equilibrium Fluctuations of Inhomogeneous Electronic States in Manganites". Europhys. Lett., 55(3), 411-417 (2001).
• V. Podzorov et al., "Phase separation and the 1/f noise in low-TMI CMR manganites" Phys. Rev. B 64, 115113 (2001).
• V. Podzorov, M. Uehara, M. Gershenson, T. Y. Koo and S-W. Cheong "Giant 1/f noise in perovskite manganites: evidence of the percolation threshold" Phys. Rev. B 61, R3784 (2000).
• V. Kiryukhin, B. G. Kim, V. Podzorov, S-W. Cheong "Multiphase segregation and metal-insulator transition in single crystal La5/8-yPryCa3/8MnO3" Phys. Rev. B 63, 024420 (2000).
• S. A. Gavrilov, T. N. Zavaritskaya, V. A. Karavanskii, N. N. Melnik, V. V. Podzorov, I. N. Sorokina "The change in the mechanism of the porous silicon formation during anodic polarization" Russian Journal of Electrochemistry, 1997, 33(9), 985 - 989.
• V. I. Beklemishev, V. A. Karavanskii, N. N. Melnik, V. V. Podzorov "Effect of electric arc plasma jet treatment on porous silicon properties" Bulletin of the Lebedev Institute, Allerton Press, No. 1-2, 1996.