Prof. Vitaly Podzorov
Rutgers University
E-mail: podzorov@physics.rutgers.edu
Dept. of
Physics Tel: (732)
445-5500 ext. 2528
P. O. Box
849
Fax: (732) 445-4343
Piscataway, NJ 08854
Recent Photos:
Funding:
Active grants:
R.U.
Academic Excellence Fund, 04/01/2008 – 03/31/2010, $60,000: “Surface
characterization of organic semiconductors for photovoltaic
applications”.
Past grants:
Group members:
Dr. Yuanzhen
Chen (postdoc)
Dr. Hikmet
Najafov (postdoc)
Bumsu Lee
(Ph.D. student)
Daniel
Mastrogiovanni (Ph.D. student)
Qibin Zhou
(Ph.D. student)
Media coverage:
Interview
with Thomson Scientific (2007): http://www.esi-topics.com/otft/interviews/rfm3_VitalyPodzorov.html
"Organic Transistors Speed Up" by A.
Hellemans, IEEE Spectrum Magazine
"Shedding Light on
Organic Transistors" by J. Mullins, IEEE Spectrum Magazine.
or, download file here: 1 and 2
"Inside
Plastic Transistors: Crystal-clear window opens on hidden flows" by P.
Weiss, Science News
and at http://www.findarticles.com/p/articles/mi_m1200/is_4_166/ai_n6151872
or, download file here.
"Science
in the shadow of scandal" by Kitta MacPherson, NJ Star Ledger
or, download
file here.
"Crazy
about crystals" by E. S. Reich, New Scientist, 19 Mar., 2005, p. 38
download the full article in pdf format here: pp. 38, 39,
40 and 41.
Journal Covers:
Research themes (more to come on each):
1. High
performance single-crystal organic field-effect transistors (OFETs).
Understanding the fundamentals of charge carrier transport and photo-physical
properties of organic semiconductors.
2. Excitons
in highly crystalline organic semiconductors; Physics of photovoltaic effect in
highly crystalline organic (and hybrid) solar cells.
3. Physics
of charge transport in conjugated polymers: chemical doping and OFETs.
4. Molecular
self-assembly at the surface of organic and inorganic semiconductors and
it’s effect on electronic and optical properties of these materials.
5. Molecular
self-assembly at the surface of graphene, and transport in graphene.
6. CNTs,
mainly transport in SAM-doped aligned nanotubes and CNT FETs.
Publications
(citations > 1500, H-index 17):
32. C.-Y.
Kao, B. Lee, L. S. Wielunski, M. Heeney, I. McCulloch, E. Garfunkel, L. C.
Feldman and V. Podzorov, “Doping of conjugated polythiophenes with alkyl
silanes”, Adv.
Funct. Mater. 19, 1 (2009).
31. M. F.
Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov,
“Electronic functionalization of the surface of organic semiconductors
with self-assembly monolayers”, Nature Mat. 7, 84
(2008).
30. M. F.
Calhoun, C. Hsieh and V. Podzorov, “Effect of shallow traps on polaron
transport at the surface of organic semiconductors”, Phys.
Rev. Lett. 98,
096402 (2007).
29. S. Subramanian, S. K. Park, S. R.
Parkin, V. Podzorov, T. N. Jackson and J. E. Anthony, “Chromophore
Fluorination Enhances Crystallization and Stability of Soluble
Anthradithiophene Semiconductors”, JACS 130, 2706 (2008).
28. M. M.
Qazilbash, Z. Q. Li, V. Podzorov, M. Brehm, F. Keilmann, B. G. Chae, H. T. Kim,
and D. N. Basov, “Electrostatic modification of infrared response in
gated structures based on VO2”, Appl.
Phys. Lett. 92, 241906 (2008).
27. Z. Li, V.
Podzorov, N. Sai, M. C. Martin, M. E. Gershenson, M. Di Ventra and D. N. Basov,
“Light quasiparticles dominate the electronic transport in molecular
crystal field-effect transistors”, Phys.
Rev. Lett. 99, 016403 (2007).
26. M. E. Gershenson, V. Podzorov, A. F.
Morpurgo, “Colloquium:
Electronic Transport in Single-Crystal Organic Transistors”, invited review, Rev.
Mod. Phys. 78, 973 (2006).
25. V. Podzorov et al., “Hall
effect in the accumulation layers on the surface of organic
semiconductors”, Phys. Rev. Lett. 95, 226601 (2005).
24. E. Menard, A. Marchenko, V. Podzorov, M. E.
Gershenson, D. Fichou, J. A. Rogers, “Nanoscale surface morphology and
rectifying behavior of a bulk single-crystal organic semiconductor”, Adv.
Mater. 18, 1552 (2006).
23. V. Podzorov and M. E. Gershenson,
“Photo-induced charge transfer across the interface between organic
molecular crystals and polymers”, Phys. Rev. Lett. 95, 016602-1 (2005).
22. V. Podzorov et al.,
“Interaction of organic surfaces with active species in the high-vacuum
environment”, Appl. Phys. Lett. 87, 093505 (2005).
21. H. Najafov, I. Biaggio, V. Podzorov, M. F.
Calhoun, M. E. Gershenson, “Primary Photoexcitations and the origin of
photo-current in rubrene single crystals”, Phys.
Rev. Lett. 96, 056604 (2006).
20. V. Podzorov et al., “Organic
Field-Effect Diode”, in preparation.
19. Z. Rang et al., "Hydrostatic
pressure dependence of charge carrier transport in the single-crystal rubrene
devices", Appl.
Phys. Lett. 86, 123501 (2005).
18. Book chapter:
V. Podzorov, “Charge transport and optical properties of organic
single-crystal field-effect transistors”, in Organic Field-Effect
Transistors, Ed. Z. Bao, (Taylor & Francis, 2006).
17. Book chapter:
R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, and V. Podzorov,
“Organic single-crystal field-effect transistors”, in Physics of
Organic Semiconductors, Ed. W.Brutting, pp. 393-432 (Wiley-VCH, 2005).
16. V. Podzorov et al.,
“Light-induced switching in back-gated organic transistors with built-in
conduction channel”, Appl.
Phys. Lett. 85, 6039 (2004).
15. E. Menard, V. Podzorov, S.-H. Hur, A. Gaur,
M. E. Gershenson and J. A. Rogers, “High-Performance n- and p-Type
Single-Crystal Organic Transistors with Free-Space Gate
Dielectrics”, Adv.
Mater. 16, 2097 (2004)
14. V. Podzorov, E. Menard, A. Borissov, V.
Kiryukhin, J. A. Rogers, and M. E. Gershenson, “Intrinsic charge-carrier
transport on the surface of organic semiconductors”, Phys.
Rev. Lett. 93, 086602 (2004).
13. R. W. I. de Boer, M. E. Gershenson, A. F.
Morpurgo, V. Podzorov, review paper “Organic single-crystal field-effect
transistors”, Phys.
Stat. Solidi (a), 201, 1302
(2004).
12. V. Podzorov, M. E. Gershenson, Ch. Kloc, R.
Zeis, and E. Bucher “High mobility ambipolar field-effect transistors
based on transition metal dichalcogenides”, Appl.
Phys. Lett. 84,
3301 (2004).
11. V. C. Sundar, J. Zaumseil, V. Podzorov, E.
Menard, R. L. Willett, M. E. Gershenson and J. A. Rogers “Mobility
Anisotropy in Rubrene Single Crystals Probed by Monolithic Elastomeric
Stamps”, Science
303, 1644 (2004).
10. V. Podzorov, et al.
“Single-crystal organic Field Effect Transistors with the hole mobility ~
8 cm2/Vs” Appl.
Phys. Lett. 83, 3504 (2003).
9. V. Podzorov, V. M. Pudalov and M. E.
Gershenson “Field Effect Transistors on Rubrene Single Crystals
with Parylene Gate Insulator” Appl.
Phys. Lett. 82, 1739 (2003).
8. V. Podzorov, B. G. Kim, V. Kiryukhin, M. E.
Gershenson and S-W. Cheong “Martensitic accommodation strain and the
metal-insulator transition in manganites” Phys.
Rev. B
64, 140406(R) (2001).
7. V. Podzorov, C. H. Chen, M. E. Gershenson
and S-W. Cheong, “Mesoscopic, Non-equilibrium Fluctuations of
Inhomogeneous Electronic States in Manganites”. Europhys.
Lett., 55 (3), pp. 411-417
(2001).
6. V. Podzorov et al., “Phase separation
and the 1/f noise in low-TMI CMR manganites” Phys.
Rev. B 64, 115113 (2001).
5. V. Podzorov et al., “1/f Noise
measurements in low-TC CMR manganites” invited paper, Mat. Res. Soc. Symp. Proc. Vol. 602
2000 MRS pp. 113 - 123.
4. V. Podzorov, M. Uehara, M. Gershenson, T. Y.
Koo and S-W. Cheong “Giant 1/f noise in perovskite manganites: evidence
of the percolation threshold” Phys.
Rev. B 61, R3784 (2000).
3. V. Kiryukhin, B. G. Kim, V. Podzorov, S-W.
Cheong “Multiphase segregation and metal-insulator transition in single
crystal La5/8-yPryCa3/8MnO3” Phys.
Rev. B 63, 024420 (2000).
2. S. A. Gavrilov, T. N. Zavaritskaya, V. A.
Karavanskii, N. N. Melnik, V. V. Podzorov, I. N. Sorokina “The change in
the mechanism of the porous silicon formation during anodic polarization”
Russian Journal of Electrochemistry, 1997, 33(9), pp. 985 - 989.
1. V. I. Beklemishev, V. A. Karavanskii, N. N.
Melnik, V. V. Podzorov "Effect of electric arc plasma jet treatment on
porous silicon properties” Bulletin of the Lebedev Institute,
Allerton Press, No. 1-2, 1996.