Office: Serin W221B
Phone: 732-445-5500 x2501
Email: gustaf@physics.rutgers.edu
The MEIS Group
Group Leader
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Office: Serin W221B Phone: 732-445-5500 x2501 Email: gustaf@physics.rutgers.edu |
Faculty
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Office: WL 225 Phone: 732-445-2747 Email: garf@rutchem.rutgers.edu |
Post-Docs
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Office: NPL 114 Phone: 732-445-5500 x3926 Email: hdlee@physics.rutgers.edu |
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Office: NPL 114 Phone: 732-445-5500 x3684 Email: stevezhu@physics.rutgers.edu |
Graduate Students
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Office: NPL 114 Phone: 732-445-5500 x3684 Email: tianfeng@physics.rutgers.edu |
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Office: NPL 114 Phone: 732-445-5500 x3926 Email: xckl@physics.rutgers.edu |
Alumni
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Email: lgoncha@physics.rutgers.edu |
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Mateus Dalponte |
| Dmitri Starodoub | Robin Barnes |
Collaborators
| Wilman Tsai | Intel Corp.at Santa Clara. HfO2 on Ge |
| Raynien Kwo | Tsinghua University,Taiwan. High-k materials on Si |
| Minghwei Hong | Tsinghua University,Taiwan. Crystalline oxides on Si |
| Darrell Schlom | Penn. State University.Crystalline oxides on Si |
| Gregory Parsons | North Carolina State University.Yttrium silicate films on Si |
| Gerald Lucovsky | North Carolina State University.Oxynitrides |
| Pedro Luis Grande | Universidade Federal do Rio Grande do Sul, Brazil.Line shapes in ion scattering |
| Gregor Schiewitz | Hahn-Meitner-Institut,Germany.Line shapes in ion scattering |
| Leonard Feldman | Vanderbilt University.Oxides on SiC |
| Henry Boudinov | Universidade Federal do Rio Grande do Sul, Brazil.Dopant implantation in Si and SIMOX |
| Israel Baumvol | Universidade Federal do Rio Grande do Sul, Brazil.Silicon oxidation and nitridation |
| Evgeni Gusev | IBM (now in Qualcomm).High-k materials |
| Glen Wilk | ASM.High-k materials on Si and GaAs |
| Safak Sayan | Intel Corp. at Oregon. |
| Angus Kingon | North Carolina State University.Lanthanum silicate gate stacks |
| Jack Lee | University of Texas at Austin.Oxygen transport in high-k materials |
| William Lennard | University of western Ontario,Canada.Surface structure of ZnFeS |
| Cory Czarnik | Applied Materials Inc.Oxynitrides |
| Robert Wallace | University of Texas at Dallas.High-k materials |
| Roy Gordon | Harvard University.TaN/Cu/Ru layers |
| Gerd Duscher | North Carolina State University.As in Si implants |
| Gloria Gottardi | Universita Di Trento,Italy.Ru/HfO2/Si |
| Ulrich Diebold | Tulane University.SnO2/Co/Al2O3 |
| Robert Opila | University of Delaware.HfSiON on Si |
| Paul McIntyre | Stanford University.High-k on Ge |
| Gennadi Bersuker | Sematech.Oxygen diffusion in high-k materials |
| Yves Chabal | Laboratory for Surface Modification, Rutgers |
| Jon-Paul Maria | North Carolina State University. |
| Patricio Häberle Tapia | Universidad Tícnica Federico Santa María,Chile. |
| Martin Frank | |
| Christian Uebing |