Dr. Vitaly Podzorov
Rutgers University
Dept. of Physics
P. O. Box 849
Piscataway, NJ 08854
E-mail: podzorov AT physics.rutgers.edu


Tel: (732) 445-2528
Fax: (732) 445-4343


                                                                      Rubrene OFET: the highest mobility organic devices (Rutgers University)

RECENT PHOTOS:
MEDIA COVERAGE:

Interview with Thomson Scientific (2007): http://www.esi-topics.com/otft/interviews/rfm3_VitalyPodzorov.html

                                                          or, see the full file here: 1 and 2

  "Inside Plastic Transistors: Crystal-clear window opens on hidden flows" by P. Weiss, Science News
                                                                                  and at   http://www.findarticles.com/p/articles/mi_m1200/is_4_166/ai_n6151872
 

"Science in the shadow of scandal" by Kitta MacPherson, NJ Star Ledger
see the full file here.
 

"Crazy about crystals" by E. S. Reich, New Scientist, 19 Mar., 2005, p. 38

see the full article in pdf format here: pp. 38, 39, 40 and 41.

RECENT AWARDS:

  NSF award DMR-0405208

  NSF award ECS-0437932

JOURNALS COVERS:
R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, V. Podzorov, review paper “Organic single-crystal field-effect transistors”, Phys. Stat. Solidi (a), 201, 1302 (2004).


E. Menard, A. Marchenko, V. Podzorov, M. E. Gershenson, D. Fichou, J. A. Rogers, “Nanoscale surface morphology and rectifying behavior of a bulk single-crystal organic semiconductor”, Adv. Mater. 18, 1552 (2006).

RECENT PUBLICATIONS (citations ~ 103):
 
M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, “Electronic functionalization of the surface of organic semiconductors with self-assembly monolayers”, accepted to Nature Materials (2007).

M. F. Calhoun, C. Hsieh and V. Podzorov, “Effect of shallow traps on polaron transport at the surface of organic semiconductors”, Phys. Rev. Lett. 98, 096402 (2007).

 
Z. Li, V. Podzorov, N. Sai, M. C. Martin, M. E. Gershenson, M. Di Ventra and D. N. Basov, “Light quasiparticles dominate the electronic transport in molecular crystal field-effect transistors”,Phys. Rev. Lett. 99, 016403 (2007).
 
V. Podzorov, E. Menard, J. A. Rogers, and M. E. Gershenson, “Hall effect in the accumulation layers on the surface of organic semiconductors”, Phys. Rev. Lett. 95, 226601 (2005).
 
E. Menard, A. Marchenko, V. Podzorov, M. E. Gershenson, D. Fichou, J. A. Rogers, “Nanoscale surface morphology and rectifying behavior of a bulk single-crystal organic semiconductor”, Adv. Mater. 18, 1552 (2006).
 
V. Podzorov and M. E. Gershenson, "Photoinduced charge transfer across the interface between organic molecular crystals and polymers " Phys. Rev. Lett. 95, 016602 (2005).
 
V. Podzorov, E. Menard, S. Pereversev, B. Yakshinsky, T. Madey, J. A. Rogers, M. E. Gershenson, "Interaction of Organic Surfaces with Active Species in the High-Vacuum Environment", Appl. Phys. Lett. 87, 093505 (2005).

Z. Rang et al., "Hydrostatic pressure dependence of charge carrier transport in the single-crystal rubrene devices", Appl. Phys. Lett. 86, 123501 (2005).

V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, and M. E. Gershenson, “Intrinsic charge-carrier transport on the surface of organic semiconductors”, Phys. Rev. Lett. 93, 086602 (2004).

E. Menard, V. Podzorov, S.-H. Hur, A. Gaur, M. E. Gershenson and J. A. Rogers, “High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics”, Adv. Mater. 16, 2097 (2004).

V. Podzorov et al., “Light-induced switching in back-gated organic transistors with built-in conduction channel”, Appl. Phys. Lett. 85, 6039 (2004).

V. Podzorov et al., “High mobility ambipolar field-effect transistors based on transition metal dichalcogenides”, Appl. Phys. Lett. 84, 3301 (2004).

V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, M. E. Gershenson and J. A. Rogers, “Mobility Anisotropy in Rubrene Single Crystals Probed by Monolithic Elastomeric Stamps”, Science303, 1644 (2004).

V. Podzorov, et al. “Single-crystal organic Field Effect Transistors with the hole mobility ~ 8 cm2/Vs” Appl. Phys. Lett. 83, 3504 (2003).

V. Podzorov, V. M. Pudalov and M. E. Gershenson “Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator” Appl. Phys. Lett. 82, 1739 (2003).
 

RESEARCH  INTERESTS:

    Transport and optical properties of organic and novel inorganic semiconductors;

    Molecular electronics and photonics;

    Nanotechnology: semiconductor nanowires;

    Sensors;
 

HONORS, AWARDS, SERVICES:
 
2004 –NSF award DMR-0405208 “Field-effect in layered organic and inorganic semiconductors”.
2004 – NSF award ECS-0437932 “Air-gap transistor stamps: enabling technology for fabrication of novel devices of organic electronics and probing fundamental limits of their performance”.
2003 – Richard Plano Ph.D. dissertation award, Rutgers University;
1997 - 2002 - Graduate Research Assistantship, Rutgers University;
1996 - Soros Graduate Fellowship;

Served as an invited organizer for the 2004 Electronic Materials Conference: http://www.tms.org/Meetings/Specialty/EMC04/EMC04.html

Reviewer for the following journals:

            PNAS,

            Nature Materials,
            Organic Electronics,
            Physical Review B (PRB),
            Physical Review Letters (PRL),
            Journal of American Chemical Society (JACS),
            Applied Physics Letters (APL),
            Journal of Applied Physics (JAP),
            Japanese Journal of Applied Physics (JJAP),
            Advanced Materials,
            International Journal of Nano-science (IJN).

Member of American Physical Society (APS) and Materials Research Society (MRS)

PUBLICATIONS:

1. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, “Electronic functionalization of the surface of organic semiconductors with self-assembly monolayers”, accepted to Nature Materials (2007).

2. M. F. Calhoun, C. Hsieh and V. Podzorov, “Effect of shallow traps on polaron transport at the surface of organic semiconductors”, Phys. Rev. Lett.98, 096402 (2007).

3. Z. Li, V. Podzorov, N. Sai, M. C. Martin, M. E. Gershenson, M. Di Ventra and D. N. Basov, “Light quasiparticles dominate the electronic transport in molecular crystal field-effect transistors”, Phys. Rev. Lett. 99, 016403 (2007).

4. Book chapter: V. Podzorov, “Charge transport and optical properties of organic single-crystal field-effect transistors”, in Organic Field-Effect Transistors, Ed. Z. Bao, (Taylor & Francis, 2006).

5. Book chapter: R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, and V. Podzorov, “Organic single-crystal field-effect transistors”, in Physics of Organic Semiconductors, Ed. W.Brutting, pp. 393-432 (Wiley-VCH, 2005).

6. M. E. Gershenson, V. Podzorov, A. F. Morpurgo, “Colloquium: Electronic Transport in Single-Crystal Organic Transistors”, invited review, Rev. Mod. Phys.78, 973 (2006).

7. V. Podzorov et al., “Hall effect in the accumulation layers on the surface of organic semiconductors”, Phys. Rev. Lett. 95, 226601 (2005).

8. E. Menard, A. Marchenko, V. Podzorov, M. E. Gershenson, D. Fichou, J. A. Rogers, “Nanoscale surface morphology and rectifying behavior of a bulk single-crystal organic semiconductor”, Adv. Mater. 18, 1552 (2006).

9. V. Podzorov and M. E. Gershenson, “Photo-induced charge transfer across the interface between organic 
molecular crystals and polymers”, Phys. Rev. Lett.95, 016602-1 (2005).

10. V. Podzorov et al., “Interaction of organic surfaces with active species in the high-vacuum environment”, 
Appl. Phys. Lett.87, 093505 (2005).

11. H. Najafov, I. Biaggio, V. Podzorov, M. F. Calhoun, M. E. Gershenson, “Primary Photoexcitations and the origin of photo-current in rubrene single crystals”, submitted to Phys. Rev. Lett. 

12. V. Podzorov et al., “Organic Field-Effect Diode”, in preparation. 

13. Z. Rang et al., "Hydrostatic pressure dependence of charge carrier transport in the single-crystal rubrene devices", 
Appl. Phys. Lett. 86, 123501 (2005). 

14. V. Podzorov et al., “Light-induced switching in back-gated organic transistors with built-in conduction channel”, 
Appl. Phys. Lett. 85, 6039 (2004). 

15. E. Menard, V. Podzorov, S.-H. Hur, A. Gaur, M. E. Gershenson and J. A. Rogers, “High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics”, Adv. Mater. 16, 2097 (2004)

16. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, and M. E. Gershenson, “Intrinsic charge-carrier transport on the surface of organic semiconductors”, Phys. Rev. Lett. 93, 086602 (2004). 

17. R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, V. Podzorov, review paper “Organic single-crystal field-effect transistors”, Phys. Stat. Solidi (a), 201, 1302 (2004). 

18. V. Podzorov, M. E. Gershenson, Ch. Kloc, R. Zeis, and E. Bucher “High mobility ambipolar field-effect transistors based on transition metal dichalcogenides”, Appl. Phys. Lett. 84, 3301 (2004). 

19. V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, M. E. Gershenson and J. A. Rogers “Mobility Anisotropy in Rubrene Single Crystals Probed by Monolithic Elastomeric Stamps”, 
Science 303, 1644 (2004). 

20. V. Podzorov, et al. “Single-crystal organic Field Effect Transistors with the hole mobility ~ 8 cm2/Vs” 
Appl. Phys. Lett. 83, 3504 (2003).

21. V. Podzorov, V. M. Pudalov and M. E. Gershenson  “Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator” Appl. Phys. Lett. 82, 1739 (2003).

22. V. Podzorov, B. G. Kim, V. Kiryukhin, M. E. Gershenson and S-W. Cheong “Martensitic accommodation strain and the metal-insulator transition in manganites”Phys. Rev. B 64, 140406(R) (2001). 

23. V. Podzorov, C. H. Chen, M. E. Gershenson and S-W. Cheong, “Mesoscopic, Non-equilibrium Fluctuations of Inhomogeneous Electronic States in Manganites”. Europhys. Lett., 55 (3), pp. 411-417 (2001). 

24. V. Podzorov et al., “Phase separation and the 1/f noise in low-TMI CMR manganites” Phys. Rev. B64, 115113 (2001). 

25. V. Podzorov et al., “1/f Noise measurements in low-TC CMR manganites” invited paper, Mat. Res. Soc. Symp. Proc. Vol. 602  2000 MRS pp. 113 - 123. 

26. V. Podzorov, M. Uehara, M. Gershenson, T. Y. Koo and S-W. Cheong “Giant 1/f noise in perovskite manganites: evidence of the percolation threshold” Phys. Rev. B61, R3784 (2000). 

27. V. Kiryukhin, B. G. Kim, V. Podzorov, S-W. Cheong “Multiphase segregation and metal-insulator transition in single crystal La5/8-yPryCa3/8MnO3”Phys. Rev. B63, 024420 (2000). 

28. S. A. Gavrilov, T. N. Zavaritskaya, V. A. Karavanskii, N. N. Melnik, V. V. Podzorov, I. N. Sorokina “The change in the mechanism of the porous silicon formation during anodic polarization” Russian Journal of Electrochemistry, 1997, 33,(9), pp. 985 - 989. 

29. V. I. Beklemishev, V. A. Karavanskii, N. N. Melnik, V. V. Podzorov "Effect of electric arc plasma jet treatment on porous silicon properties” Bulletin of the Lebedev Institute, Allerton Press, No. 1-2, 1996. 

SELECTED PRESENTATIONS

· V. Podzorov, invited talk “Nanoscale surface modification of organic semiconductors: surface functionalization and transport measurements”, 2007 SPIE Annual Conference, San Diego, CA, 26-30 August, 2007;

· V. Podzorov, invited talk “Intrinsic transport and optical properties of novel Organic Semiconductor Devices”, Institute of Chemistry, Academia Sinica, Taipei, Taiwan, 26th July, 2007;

· V. Podzorov, invited talk “Nanoscale modification of the surface of organic semiconductors: novel tools for surface functionalization”, Organic Microelectronics Workshop, Seattle, WA, 8-11 July, 2007;

· V. Podzorov, invited talk “Recent advances in single-crystal OFETs”, European Materials Research Society, Strasbourg, France, May 28th – June 1st, 2007.

· V. Podzorov, invited seminar “Charge carrier transport and optical properties of single-crystal OFETs”, Nanyang Technological University, Singapore,May 15th, 2007;

· V. Podzorov, invited talk “Charge carrier transport and optical properties of single-crystal organic field-effect transistors”, Philips,Eindhoven, the Netherlands, 19-22 June, 2006.

· V. Podzorov, invited seminar “Single-crystal Organic Field-Effect Transistors”, Dept. of Materials Science and Engineering, University of Washington, Seattle, WA, May 5, 2006;

· V. Podzorov, invited seminar “Transport and Optical Properties of single-crystal Organic Field-Effect Transistors”, Dept. of Materials Research, Norfolk State University, Norfolk, VA, April 7, 2006;

· V. Podzorov, invited talk “Novel photo-induced phenomena at organic-dielectric interfaces in OFETs”, ICAM workshop on Transport in Single-Crystal Organic Semiconductors, American Physical Society (APS) March Meeting, Baltimore, MD, March, 2006;

· V. Podzorov, invited colloquium “Electronic Properties of single crystal Organic Field-Effect Transistors”, Dept. of Applied Physics, Stanford University, Stanford, CA, Feb. 6, 2006;

· V. Podzorov, invited seminar “Transport and Optical Properties of single-crystal Organic Field-Effect Transistors”, Bell Labs, Lucent Technologies, Murray Hill, NJ, Dec. 1st, 2005;

· V. Podzorov, invited talk “Transport and Photo-Physical Properties of Field-Effect Conduction Channel in Organic Semiconductors” 2005 SPIE Annual Conference, San Diego, CA, July 31- August 4, 2005.

· V. Podzorov, invited talk “Charge Transport in Organic Field-Effect Transistors”, Dept. of Physics, U. of Illinois, UrbanaChampaign (UIUC),Nov. 19, 2004.

· V. Podzorov, invited talk, PrincetonUniversity, Dept. of Electrical Engineering “Charge Transport in Organic Field-Effect Transistors”, Dec. 1st, 2004.

· V. Podzorov, invited colloquium, RutgersUniversity, Dept. of Physics, “Overview of Recent Advances in Organic Electronics with an Emphasis on the Charge Transport in Organic Field-Effect Transistors”, Dec. 06, 2004.

· V. Podzorov, invited talk at American Physical Society (APS) March Meeting, Los Angeles, CA “Charge Transport in Organic Field-Effect Transistors”, March 2005;

· V. Podzorov, invited talk “Intrinsic Charge Carrier Transport on the Surface of Organic Semiconductors” 2004 Electronic materials Conference (EMC), University of Notre Dame, Notre Dame, Indiana, June 23-25, 2004.

· V. Podzorov, invited talk “Charge Carrier Transport in the Single-crystal Organic Field-Effect Transistors”, Agranovich Workshop, University of Texas at Dallas, Richardson, TX, January 21-23, 2004.

· V. Podzorov, “High Mobility Ambipolar Field-Effect Transistors Based on Transition-Metal Dichalcogenides”, Fpi6 conference, CornellUniversity, Ithaca, NY, June 14-18, 2004.

· V. Podzorov, “High Performance Single-Crystal Organic Field-Effect Transistors”, Fpi6 conference,CornellUniversity, Ithaca, NY, June 14-18, 2004.

· V. Podzorov, APS March Meeting, Indianapolis, IN, "Martensitic accommodation strain and the metal-insulator transition in manganites", March 2002;

· V. Podzorov, invited talk, MRS Meeting,Boston, MA, "1/f Noise measurements in low-TCCMR manganites", Nov. 1999;

· V. Podzorov, APS March Meeting, Minneapolis, MN, "Giant 1/f noise in manganites: evidence of the percolation threshold", March 2000;