From: David Vanderbilt <dhv@physics.rutgers.edu> Date: Mon, 15 Jan 1996 16:31:35 -0500
Author(s): J. Bennetto , David Vanderbilt (Department of Physics,Astronomy, Rutgers University)
Comments: 4 pages, two-column style with 2 postscript figures embedded. Uses REVTEX and epsf macros. Also available at
this http URL
We calculate the transverse effective charges of zincblende compound semiconductors using Harrison's tight-binding model to describe the electronic structure. Our results, which are essentially exact within the model, are found to be in much better agreement with experiment than previous perturbation-theory estimates. Efforts to improve the results by using more sophisticated variants of the tight-binding model were actually less successful. The results underline the importance of including quantities that are sensitive to the electronic wavefunctions, such as the effective charges, in the fitting of tight-binding models.