I will review recent developments in the field of digital nanoelectronics. During the last decade, the work was focused mostly on single-electron circuits. The severe problem of the background charge randomness have forced researchers to focus on the search for possible ways to circumvent it. As a result of this work, several new ideas were proposed recently, including background-charge-insensitive operation for single-electron transistors (SET), fast Fowler-Nordheim tunneling through layered "crested" barriers, and ballistic operation of nanoscale silicon MOSFETs with intrinsic channel. The practical implementation of these ideas may lead to the development of several revolutionary terabit-scale systems, including