0` @@@ @@@@ l>pUnpP  EN DB ?O.   _  >& * z jBa Freer1995 aKolbesen19898W Rentscheir1987QRnp Ѯ ne0.N^NuNV?.N-@؟/N> /. /.؟NN^NuNVp  M0(N^NuNV؜Bn؜A-H؟` n؟0nf n؟(`Rn؜p ؟ n؜eN^NuNV؜Bn؜A-H`* n0nf n h//. N`Rnp Ѯ ne/. ?<NN^NupNuNVBnA-H` n0nf n (`Rnp Ѯ n1 m> P>fN n+P\"m>-Q nJ`Tg( n?(bNT-@ m> P>bN n+PBT m>-P"n+iLX;iRT;iVV;iTR"iXB+IN n h\\+HJ np(jr h;@`J@f;|` np(kr h;@bJ@f;|bN^NuJBg m> P!mXL -NB m> P!@X -J\ m> P!@\ m> P1mVV m> P1mRT m>2mT P!IP m> P?(fN m> PJ`Tg m> P?(bNTBBNuNVJf A+HF`+nFN^NuNVpЮ-@rҮ -ABg///<N=_Jnf0Bg np"nHq np n Hp/<N=_0.N^NuNV m>-P"nJ)kf n|k m>-P"nJ)jf n|j m>-P"np)kr h;@br)jt i;A`?<0@/N=@>N *-@>0m`/N=@>N -@ n-PrҮ-A"A2*TRepinsky19899 Reuter1991\ Revesz1982F Ribbing1988 Riehl-Chudoba1994` Rigo19791^ Rigo19844_ Rigo19868O Rigo19899j Rigo1989$ Rigo1993e Rigo19944 Rigo19966$ Rigo1996& Rigo1996 Rioux19957 Rishton1995] Robertson1987^ Rochet19849_ Rochet19869O Rochet19899 Rogers1993` Rosencher1979F Ross19881a Ross19929b Ross19949y Ross19949` Rosser1956Y Rothen1926A Rottger1992 Rottger1994_ Roulet198664 Rowe1997k Rubloff1985j Rubloff1986i Rubloff1987h Rubloff19905 Ruzyllo19887 Sai-Halasz1995,' Saks19950 Saks1996- Saldin1993 Sami19919ESamsavar1988Saraswat1985b Saris1982 Sawabe1996\ Schaeffer1982 Schafer1985 Scharff1953 Scharff1961e Schulte1994x Seah19838c Seiple1993 Seiple19944 Seiple1995 Shatas19855 Shibata1989 Shimizu1985 Shimizu1993 Shinn1993n Shinoda1990g Shiraki1986= Shive1993Shklyaev19899Shklyaev1995wShklyaev1996 Shuh19959Shuh1995, December 1  Sigmund1994~ Silverman1978 Silverman1979Sinclair1987Sinclair1993USinclair1994b Smeenk1982d Smith1982w Sofield1991 Sofield1995 Soukiassian1994( Spear1989Speidell1991g Spicer1986 Sproule1993 Sproule1995: Stathis1993Statiris1994Statiris1994e Stedile1994 Stedile1996$ Stedile1996& Stedile1996 Stenin1989~ Stensgaard1978 Stensgaard1979Stepniak1995Z Stivastava1987 Stockhausen1992{ Stokell1992fStoneham19874OStoneham1989Stoneham1995`Straboni19799w Sugden19911n Sugii1990t Sugii1992N Sugita19965 Suh1996 Suma19891< Sumita19929 Sumita19933m Sumita19944l Sun1991~ Sun1992 Surnev1994b Sutherland1995 Sutherland1995, December 1.9 Suzuki1992 Suzuki1993 Suzuki19959w Suzuki19969Swartzentruber1995Sweatman19933g Tabe1986V Tabe1993 Tabe1994h Tagawa1993TTaglauer19929xTaglauer1994_ Taguchi1996GTakakura19933oTakakuwa1993Takakuwa19949pTakakuwa1994qTakakuwa1997 Takano19959NTakasaki19966 Takayanagi19852Taleb-Ibrahimi1988=h Tamura1993 Tamura19933F Tan1993h Tanaka1993L Tang1993| Tang19941 Tang19949 Tang1994  Tang1994J Tang19949J Tang1994 Tang19959 Taniguchi1989_ Taniguchi1996PTanimoto1989 Tanishiro1985y Tanuma1988 Tao19954 Tao1997 Tapinskaya1994 Tapinskaya19947 Taur1995 Tay19950 Tay1996v Tay1997W Taylor19877?Teramoto19913 Terminello1995 Terminello1995, December 1.YTidswell1991 Tiller1981} Tiller1983B Tiller1990 Timme1996 Ting19900 Ting1991 Tobin1994 Tobin19951 Tobin19962 Tobin19963 Toby19977iTokumoto1993 Tong1995oTong1995, December 1m- Tonner1993Tressler1984(Tressler1989j Trimaille1989$ Trimaille1993e Trimaille1994 Trimaille1996$ Trimaille1996& Trimaille1996 Tringides1995b Tromp1982k Tromp1985l Tromp1985 Tromp1991 Tromp1996 Tronin19941 Tronin19941 Troyan1991 Troyan19941 Troyan19941 Troyan19941X Tsamis1996 Tsang1993 Tsong1994X Tsoukalas1996O Tsukiji1995 Turkenburg1987b Twesten1994y Twesten1994_ Uda1996 Udagawa1993 Udagawa1993U Udagawa1994m Udagawa1994 Umbach1989 Umbach1989h Umeno1993van_der_Meulen1974 Vasquez1979n Veen1985o Veen19919= Vitus1993 Vogel1996o Vrijmoeth1991| Vul'19988 Wagner19829 Wagner1982 Walkup19884 Wall19949u Wallace1997v Wallace1997p Wandelt1985 Wang19961+ Warren19951<Watanabe1992r Weast1984 Weaver19933 Weaver19955 Weaver19955 Weg1987 Wei1994u Wei1997 Westermann1994B Wheller1993 White1994) Wiggins1981u Wilk1997v Wilk1997~Williams19788& Wilmsen19857 Wind19951` Wise195657 Wong19955 Wortman1994 Wortman1996Wristers1995 Wristers1996R6 Wu1996 Wurm1994 Wurth1989 Wurth1989)Wynblatt1981 Xu1994a Xu19955<Y.Akutsu19929Yabumoto1992Yabumoto1993 Yagi1985iq Yagi1993Yakovlev1992Yakovlev19959Yamamoto19955Yamazaki1994 Yan1995 Yao1995 Yao19952 Yarmoff19884 Yasaka1991tG Yasaka19939 Yasuda199496 Yeh1996 Yeow1995v Yoon19945 Youn1996i Young1987{ Yu1992 Zacchetti1990 Zafar1995o Zagwijn1991- Zhang1996. Zhang1996{ Zhao19929 Zhou1993 Ziegler1977  Zinke-Allmang1994Takayanagi19852Taleb-Ibrahimi1988=h Tamura1993 Tamura19933F Tan1993h Tanaka1993| Tang19941 Tang19949 Tang1994  Tang1994  Tang19959 Taniguchi1989PTanimoto1989 Tanishiro1985 Tao1995 Tapinskaya1994 Tapinskaya1994 Tay1995W Taylor19877 Terminello1995 Terminello1995, December 1.YTidswell1991 Tiller1981B Tiller1990 Ting19900 Tobin1995iTokumoto1993 Tong1995oTong1995, December 1m- Tonner1993Tressler1984j Trimaille1989$ Trimaille1993e Trimaille1994 Trimaille1996 Tringides1995k Tromp1985l Tromp1985 Tromp1991 Tronin19941 Tronin19941 Troyan1991 Troyan19941 Troyan19941 Troyan19941 Tsong1994 Turkenburg1987b Twesten1994y Twesten1994 Udagawa1993 Udagawa1993U Udagawa1994m Udagawa1994 Umbach1989 Umbach1989h Umeno1993van_der_Meulen1974 Vasquez1979n Veen1985o Veen19919 Vogel1996o Vrijmoeth1991 Wagner19829 Wagner1982 Walkup19884 Wall19949p Wandelt1985  Wang19961 Weaver19933 Weaver19955 Weaver19955 Weg1987 Wei1994 Westermann1994 White1994~Williams19788& Wilmsen1985 Wortman1994 Wortman1996Wristers1995 Wristers1996R Wurm1994 Wurth1989 Wurth1989 Xu1994a Xu199559Yabumoto1992Yabumoto1993 Yagi1985iq Yagi1993Yakovlev1992Yakovlev19959Yamamoto19955Yamazaki1994 Yan1995 Yao1995 Yao19952 Yarmoff19884 Yasaka1991t Yasuda19949 Yeow1995v Yoon1994{ Yu1992 Zacchetti1990 Zafar1995o Zagwijn1991{ Zhao19929 Zhou1993 Ziegler1977  Zinke-Allmang1994fp-@`N   N JO g .`pN^NuNVN-@ @ P-hHJfN`/.N"N^NuNVNr=@J@gNzN;n0N/.N-@>/N=@J@Pf=|Bn`0?.Hn/.NJnWDH>/.HnNORn0.nm/./.N" n#.NTN^NuNVBgHn/.N,.HnNfN^NuNVHnHnHn/.NJnOcH ni@ nJp0."-H/N n P"np0."Q.. njX`Nx-@ .N^NuNVNr=@J@gNzNN2;n0NJfNf-@|`/.N Kao1993 Kao1994 Kato1996Kawakami1989LKawakami1990@Kawanabe19922 Kaxiras1993 Kendall1995b Kersten1982 Kidd19933? Kido1991 Kim19945 Kim1996@ Kimura19949} Kinchin1955A Kliese1992 Kliese1994Klitsner19919 Kobayashi1985n Kobayashi1990t Kobayashi1992 Kobayashi1995G Kobeda19888X Koch1991r Kohler19933u Kohno1994 Kolbesen19898Gustafsson1995 Gustafsson1996 Gustafsson1996 Gustafsson1996#Habraken1994* Hahn1984+ Haight1982 Hamaguchi1989 Hamers19877, Han1988 Han1995  Han1996- Harp1993Harrison1995Hasegawa1989LHasegawa1990uHasegawa1994 Hattangady1994  Hattangady1995. Hattori1993 Hattori1993/ Hattori1994 Hattori1994 Hattori1995( Hecht1987 Hedge1995T Heiland1992, Helms1988 Helms1988 Helms1989 Helms1993 Helms1994* Henzler1984 Henzler1993Q Hessel19922R Hessel19933 Heyraud19950 Higashi19911 Higashi1993 Hill19966 Himpsel1983 Himpsel19867 Himpsel19872 Himpsel19883 Himpsel1993v Himpsel1994 Himpsel1995Himpsel1995, December 14 Hirose1991t Hirose19949zHochella1988˪ Hoegen1991r Hofer19945 Hoff19881 Hoffer1989 Hoffer1989 6 Hollinger1983 Hollinger19867 Hollinger19872 Hollinger19888Holloway198189 Homma1992 Homma1993 Hong19949 Horie1994 Hornung1994u Hosaka19949u Hosoki19949 Houston1995 Hsu1995 Hu1974 Hughes19866 Hussey1993 Hwang1990 Hybertsen1995 Hybertsen1996 Ibach1982 Ibach1982 Ingo1990 Irene1974: Irene1983J Irene1985 Irene1985Z Irene1987; Irene1988G Irene1988 Irene1992 Irene1993 Irene1994 Irene1995 Irene1995 Itoh19771iIwatsuki1993~ Jackman1978 Jacob1993< Jakob1993 Jaoul1995Jellison1991 Jia1995Jia1995, December 1F Jiang1993 Jimenez1995Jimenez1995, December 1 Johansson1995 Johansson1995( Johnson1987 Jordan19866 Joslin19949V Kageshima1993 Kageshima1994Kamigaki1977==Kamigaki1991=Kamohara1991 Kampen1992 Kao1989> Kao1993 Kao1994 Kato1996Kawakami1989LKawakami1990 Kaxiras1993 Kendall1995 Kidd19933? Kido1991 Kim1994@ Kimura19949} Kinchin1955A Kliese1992 Kliese1994Klitsner19919 Kobayashi1985 Kobayashi1995G Kobeda19888X Koch1991r Kohler19933u Kohno1994 Kolbesen19898 AuthorsJournalsKeywords  "0\DH V0P r|Vd#Bv Pfs PavYx[t(!W. Braun J.T. Herron D.K. Kahaner  1988Int. J. Chem. Kinetics2051ono, gas phase M.A. Briere J.P. Biersack 1992<6Energy Loss Straggling of MeV ions in thin solid filmsNucl. Instr. Meth. B64 693 D. Briggs M. P. Seah 1983NHPractical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy John Wiley & Sons, Ltd$E. Briner C. Meiner A. Rothenm 1926RLRecherches sur la decomposition thermique du protoxyde et de l'oxyde d'azoteJ. Chim. Phys.23 609  onon R.L. Brown 1976ZSInst. of Material Research, N.S.B. Washington D.C., Document Number NSBIR 76 -1055.60K. Brunner G. Abstreiter B.O. Kolbesen H.W. Meul 1989@Strain at Si-SiO2 interfaces studied by micro-raman spectroscopyq @ qqAppl. Surf. Sci.39 116JDhomogenious strain into the silicon to a depth of approximately 1 umNew, 27 oct, 1993H. Bu J.W. Rabalais 1994;Structure analysis of O2 and H2O chemisorption on a Si(100)q @ qq @ qq Surf. Sci. 301 285 Surf. Sci.H. Bu J.W. Rabalais 1994H2O and O2 on Si(100) Surf. Sci. 301 285 N. Cabrera N.F. Mott 1948Rep. Prog. Phys.12 148D.G. Cahill Ph. Avouris 1992"Si ejection and regrowth..."Appl. Phys. Lett.60 326"A.H. Carim A. Bhattacharyya 1985PSi/SiO2 interface roughness: structural observation and electrical consequences.q @ qqAppl. Phys. Lett.46 872New, 15 Sep 1993A.H. Carim R. Sinclair 1987p,The evolution of Si/SiO2 interface roughnessq @ qqJ. Electrochem. Soc. 134 741New, 15 Sep 1993E.C. Carr R.A. Buhrman 1993PJRole of interfacail nitrogen in improving thin silicon oxides grown in N2OAppl. Phys. Lett.6354 ONO>!E.C. Carr K.A. Ellis R.A. Buhrmanh  1995 V9N profiles in thin SiO2 in N2O: the role of atomic oxygen .Appl. Phys. Lett. 66  1492  ono E. Cartier D.J. DiMaria 1993PJHot-Electron Dynamics in SiO2 and the Degradation of the Si/SiO2 Interface"Microelectronic Engineering22 207("E. Cartier D.A. Buchanan G.J. Dunn 1994f_Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on siliconAppl. Phys. Lett.64 901("G.F. Cerofolini G. LaBruna L. Meda 1995,%Enhanced Si Oxidation in O2 and O2:F2Appl. Surf. Sci89 3614 Y.J. Chabal S.B. Christman 1984H2O on Si(100) Phys. Rev. B29 6974 Y.J. Chabal 1984H2O on Si(100) Phys. Rev. B29 3677 Y.J. Chabal 1993VOInfrared Spectroscopy of Semiconductor Surfaces: H-terminated Silicon surfaces.J. Mol. Struct.  292650*M. Chander Y.Z. Li J.C. Patrin J.H. Weaver 1993H2O on Si(100) by STM Phys. Rev. B48 24934.M. Chander D.A. Goetsch C.M. Aldao J.H. Weaver 1995haDetermination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-(2x1) by ChlorinePhys. Rev. Lett.74 2014<5N.W. Cheung L.C. Feldman P.J. Silverman I. Stensgaard 1979Appl. Phys. Lett.35 859J.F. Conley P.M. Lenahan 1996:4A Review of ESRS of defects in thin films SiO2 on Si .'H.Z. Massoud E.H. Poindexter C.R. HelmsF?The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3 Pennington, NJ The Electrochemical Soc. 96 - 1 214181M. Copel R.M. Tromp H.J. Timme K. Penner T. Nakao 1996:3Effects of surf. oxide on RT nitridation of Si(100)J. Vac. Sci. Technol. A14 462"J.A. Costello R.E. Tressler 1984PIIsotope lebeling studies of the oxidation of silicon at 1000 C and 1300 CJ. Electrochem. Soc. 131 1944isotope oxidationb[SIMS 1000 C - O-18 near the surface and the interface 1300 C - o-18 is uniform across oxide NewS.S. Cristy J.B. Condon 19810*A model for oxidation of silicon by OxygenJ. Electrochem. Soc. 12810 2170isotope oxidationHBion microprobe (100A depth resolution) thick film follows DG model New("M.P. D'Evelyn M.M. Nelson T. Engel 1987 Surf. Sci. 18675F@J.I. Dadap B. Doris Q. Deng M.C. Downer J.K. Lowell A.C. Diebold 1994zRandomly oriented Angstrom-scale microroughness at the Si(100)/SiO2 interface probed by optical second harmonic generationAppl. Phys. Lett.64 2139 roughness*#H. Dallaporta M. Liehr J.E. Lewis 1990:4Silicon dioxide defects induced by metal impurities. Phys. Rev. B41  5075&NIST Chemical Kinetics Databasen 1994 version 6.01B.E. Deal A.S. Grove 1965@9General Relationship for the ThERMAL oXIDATION OF sILICON\J. Appl. Phys.36 3770 B.E. Deal 19880*Historic perspectives of silicon oxidation C.R. Helms B.E. Deal;The Physics and Chemistry of SiO2 and the Si-SiO2 Interfaceq @ q!q0 @ q1q NY  Plenum Press52,J.M. Delarious C.R. Helms D.B. Kao B.E. Deal 1989\UParallel oxidation model for Si including both molecular and atomic oxygen mechanismsAppl. Surf. Sci.3989TNoxygen incorporation into oxide dissociation at the interface parallel species                           &. Ovu2v-B,eT+*WS%xxvF)J3(p'Vv Jt&%cT|$2,%R. Gale H. Chew F.J. Feigl C.W. Magee 1988Hydrogen and D C.R. Helms B.E. Deal;The Physics and Chemistry of SiO2 and the Si-SiO2 Interfaceq @ q!q0 @ q1q NY  Plenum Press 1772,J.J. Ganem G. Battistig S. Rigo I. Trimaille 1993RLA study of the initial stages of the oxidation of silicon using O18 and RTP.Appl. Surf. Sci. 65/66 647isotope oxidationB;J.J. Ganem S. Rigo I. Trimaille I.J.R. Baumvol F.C. Stedile 1996haDry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methodsAppl. Phys. Lett.68 2366 ONO $E. Garfunkel E. Gusev A. Vul' 1998F@Fundamental Aspects of Ultrathin Dielectrics on Si-based DevicesNATO Science Series Dordrecht Boston London Kluwer Academic Publishers&C. Gelain A. Cassuto P. Le Goff 1971 Oxid. Met.3 139"J.M. Gibson M.Y. Lanzerotti 1989F@Observation of interfacial atomic steps during silicon oxidation Nature 340 128,%M.A.F. Gomes E.F. daSilva J.A. Aguiar 19952+Growth kinetics of thermal SiO2 thin filmsSemic. Sci. Techn. 1037 non-completely oxidized SiPJS.M. Goodnick D.K. Ferry C.M. Wilmsen Z. Liliental D. Fathy O.L. Krivanek 1985t/Surface rougness at the Si(100)-SiO2 interface.q# @ q$q Phys. Rev. B32  8171 G. Gotz K. Gartner 1988.'High Energy Ion Beam Analysis of Solids Berlin Akademie-Verlag2+S.M. Gray M.K.J. Johansson L.S.O. Johansson 1995HBNanoscale Roughening of Si(001) Induced by Oxide Desorption in UHVRKFifth International Conference on the Formation of Semiconductor Interfaces Princeton, USAtmM.L. Green D. Brasen K.W. Evans-Lutterodt L.C. Feldman K. Krisch W. Lennard H.T. Tang L. Manchanda M.T. Tang 1994RTO of Si in N2OAppl. Phys. Lett.65 848 ONOtmM.L. Green D. Brasen K.W. Evans-Lutterodt L.C. Feldman K. Krisch W. Lennard H.T. Tang L. Manchanda M.T. Tang 1994LERTO of Si in N2O between 800 and 1200 C: Incorporated N and roughnessAppl. Phys. Lett.65 848 ONO<6M.L. Green D. Brasen L.C. Feldman W. Lennard H.T. Tang 1995JDEffect of Incorporated Nitrogen on the kinetics of thin RTN2O oxidesAppl. Phys. Lett.67 1600 ONO M. L. Green 199581Rapid Thermal O2-Oxidation and N2O-Oxynitridatione  F. Roozeboom:3Advances in Rapid Thermal and Integrated Processing. New York - London  Plenum Press 193 NATO ASI SeriesAONO, RTOJ.E. Griffith D.A. Grigg 1993& Dimentional methodology with SPMJ. Appl. Phys.74 R83VPF.J. Grunthaner P.J. Grunthaner R.P. Vasquez B.F. Lewis J. Maserjian A. Madhukar 1979Phys. Rev. Lett.43 1683&F.J. Grunthaner P.J. Grunthaner 1986Mat. Sci. Rep.165>7P.J. Grunthaner M.H. Hecht F.J. Grunthaner N.M. Johnson 1987J. Appl. Phys.61 629VPA. Gupta S. Toby E. P. Gusev H.C. Lu Y. Li M.L. Green T. Gustafsson E. Garfunkel 1997HBNitrous Oxide Gas Phase Chemistry during Silicon Oxynitride Growthto be published ono4-E.P. Gusev H.C. Lu T. Gustafsson E. Garfunkel 1994XROn the Mechanism of Ultra Thin Silicon Oxide Film Growth during Thermal Oxidation ,&S.P. Murarka K. Rose T. Ohmi T. SeidelJDInterface Control of Electrical, Chemical, and Mechanical Properties MRS 31869 MRS Symposium ProceedingsE.P. Gusev E. Garfunkel 1994 AFM unpublishedB;E.P. Gusev H.C. Lu E. Garfunkel T. Gustafsson V.A. Yakovlev 1995MEIS, XPS, etc. unpublished4-E.P. Gusev H.C. Lu T. Gustafsson E. Garfunkel 1995 isotope paper Phys. Rev. B52 17594-E.P. Gusev H.C. Lu T. Gustafsson E. Garfunkel 1996 ASSAppl. Surf. Sci.104/105s 3294.E.P. Gusev H.C. Lu T. Gustafsson E. Garfunkel 1996$New Features of Si. Oxidation .'H.Z. Massoud E.H. Poindexter C.R. HelmsF?The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3 Pennington, NJ The Electrochemical Soc. 96 - 149HBE.P. Gusev H.C. Lu T. Gustafsson E. Garfunkel M.L. Green D. Brasen 1997D>The Composition of Ultrathin Oxynitrides Thermally Grown in NOJ. Appl. Phys.82 July Issue ONOr4.E.P. Gusev H.C. Lu T. Gustafsson E. Garfunkel 1997ZTSilicon Oxidation and Oxynitridation in the Ultrathin Regime: Ion Scattering StudiesBrazil. J. Phys.27 June Issue onom&F.H.P.M. Habraken A.E.T. Kuiper 1994*$Silicon Nitride and Oxynitride Films$Materials Sci. and Eng. Rept. R12 123P.O. Hahn M. Henzler 1984QThe Si-Sio2 interface: correlation of atomic structure and electrical properties.q @ q qJ. Vac. Sci. Tech.A2 574R. Haight L.C. Feldman 1982n)atomic structure of the Si-SiO2 interfaceq @ qqJ. Appl. Phys.53 4884C.-J. Han C.R.Helms, 1987J. Electrochem. Soc. 134x 1297C.J. Han C.R. Helms 1988z6O18 tracer study of Si oxidation in dry O2 using SIMS.q) @ q*qJ. Electrochem. Soc. 135 1824Isotope(!G.R. Harp D.K. Saldin B.P. Tonner 1993qFinite-size effects and short-range cristalline order in Si and SiO2 studied by x-ray abs. fine str. spectroscopyqC @ qDqJ. Phys. Condens. Matt.5 5377 cristalinityNew, 15 Sep 1993M. Hartig P.J. Tobin 1996Gas Phase KineticsJ. Electrochem. Soc. 143 1753 ono.(T. Hasegawa M. Kohno S. Hosaka S. Hosoki 1994@9Initial stages of oxygen adsorption on Si(111)-7x7 by STM Surf. Sci. 312 L753<5E. Hasegawa A. Ishitani K. Akimoto M. Tsukiji N. OhtaS 1995J. Electrochem. Soc. 142 273*$S.V. Hattangady H. Niimi G. Lucovsky 1995B;Controlled Nitrogen Incorporation at the gate oxide SurfaceAppl. Phys. Lett.66 3495 ONO T. Hattori 1993jcStructural Imperfections in Ultra-Thin Silicon Oxides grown on Hydrogen terminated Silicom SurfacesMRS Fall meeting  Boston, USA92layer-by-layer growth,D-l||q6 u)rvplonmzyXlkji2}f74y Lhq`ppo^xzg`0*M. Tabe T.T. Chiang I. Lindau W. E. Spicer 1986 Phys. Rev. B34 2706 E. Taglauer 1994 Probing surfaces with ions Surf. Sci.Surfase science299/30064& Y. Takakuwa M. Nihei N. Miyamoto 1993Jpn. J. Appl. Phys.+32 L4800)Y. Takakuwa M. Nihei T. Horie N. Miyamotoo 1994 J. Non-Crystalline Solids 179 345& Y. Takakuwa M. Nihei N. Miyamoto 1997Appl. Surf. Sci.117/118 1416/T. Tamura N. Tanaka M. Tagawa N. Ohmae M. Umeno 1993VPEffects of External Stresses on the Low Temperature Thermal Oxidation of SiliconJpn. J. Appl. Phys.3212oxidation mechanism*$interstitial-related oxidation model New>8 M.T. Tang K.W. Evans-Lutterodt G.S. Higashi T. Boone 1993Appl. Phys. Lett62 3144 roughness ^WH.T. Tang W.N. Lennard M. Zinke-Allmang I.V. Mitchell L.C. Feldman M.L. Green D. Brasen 19946/Nitrogen Content of Oxynitride films on Si(100)Appl. Phys. Lett.6464 ONO*$K. Taniguchi Y. Shibata C. Hamaguchi 1989WTheor. model for self-interstitial generation at the Si/SiO2 interface during oxidationq; @ q<qJ. Appl. Phys.65 2723(!S. Tanuma C. J. Powell D. R. Penn 1988JCCalculations of electron inelastic mean free paths for 31 materialsSurf. Interface Anal.11 577PJH.-S. Tao E.P. Gusev H.C. Lu T.E. Madey T. Gustafsson E. Garfunkel J. Rowe 1997,%Photoemission and MEIS on Oxynitrides onoleY. Taur Y.J. Mii D.J. Frank H.S. Wong D.A. Buchanan S.J. Wind S.A. Rishton G.A. Sai-Halasz E.J. Nowak 1995<5CMOS scaling into the 21st century: 0,1 mm and beyondIBM Res. Develop.39 245 W.A. Tiller 19814.On the Kinetics of the Thermal Oxidation of SiJ. Electrochem. Soc. 128 689 W. A. Tiller 1983Blocking Layer ModelJ. Electrochem. Soc. 130 501>"W. Ting H. Hwang J. Lee D.L. Kwong  1991 J.Growth kinetics of ultrathin SIo2 films in N2O *J. Appl. Phys. 70  1072  ONO F@P.J. Tobin Y. Okada S.A. Ajuria V. Lakhotia W.A. Feil R.I. Hedge 1994F?Furnace formation of Silicon oxynitride thin dielectrics in N2OiJ. Appl. Phys.75 1811 ONOH. Tokumoto M. Iwatsuki3 1993XRScanning Tunneling miscroscopy of clean silicon surfaces at elevated temperatures.Jpn. J. Appl. Phys.32 1368I. Trimaille S. Rigo 1989xqUse of 18O isotopic labelling to study thermal dry oxidation of silicon as a function of temperature and pressureAppl. Surf. Sci.3965isotope oxidationNRA with HF etch New@:R. Tromp G.W. Rubloff P. Balk F.K. LeGoues E.J. van Loenen 19857Ion beam crystallography of Si surfaces : Si(111) (7x7) Surf. Sci. 155 441PIR.M. Tromp M. Copel M.C. Reuter M. Horn von Hoegen J. Speidell R. Koudijs 1991HAA new 2-D particle detector for a toroidal electrostatic analyserRev. Sci. Instrum.62 2679,%C. Tsamis D.N. Kouvatsos D. Tsoukalas 1996ngInfluence of N2O Oxidation of Silicon on Point DEfect Injection Kinetics in the High Temperature RegimeAppl. Phys. Lett.69 2725 ono("R.D. Twesten J.M. Gibson F.M. Ross 19946/Visualization of Dynamic Near-Surface Processes MRS Bulletin2938"M. Udagawa M. Niwa I. Sumita 1993 ? silicon oxidation by STMJpn. J. Appl. Phys.32 282"M. Udagawa M. Niwa I. Sumita 1994LELocal Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)Jpn. J. Appl. Phys.33 375 STMJ.F. van der Veen 1985:3Ion beam crystallography of surfaces and interfacesSurf. Sci. Rept.5 199@:J. Vrijmoeth P.M. Zagwijn J.W.M. Frenken J.F. van der Veen 1991`ZMonolayer resolution in medium-energy ion-scattering experiments on the NiSi2(111) surfacePhys. Rev. Lett.679l 1134R.E. Walkup S. Raider 1988VPIn-situ measurements of SiO(g) production during dry oxidation of crystalline SiAppl. Phys. Lett.53 888M K. Wandelt 1985*#Photoemision from oxygen overlayersSurf. Sci. Rept.21  R. C. Weast 1984(!Handbook of Chemistry and Physics Boca Raton, Florida CRC Press, Inc.("J. Westermann H. Nienhaus W. Monch 1994:3Oxidation Stages of clean and H-term. Si(100) at RT Surf. Sci. 311 101Cabrera-Mott mechanism*#M.D. Wiggins R.J. Baird P. Wynblatt 19814.Thermal Nitridation of Si(111) by Nitric OxideJ. Vac. Sci. Technol.18 965 ONO0)G.D. Wilk Yi Wei Hal Edwards R.M. Wallace 1997("In situ Si flux cleaning techniqueAppl. Phys. Lett.70 228881D. Wristers L.K. Han T. Chen H.H. Wang D.L. Kwong 1996RLDegradation of Oxynitride gate dielectric reliability due to boron diffusionAppl. Phys. Lett.68 2094 ONOR.J. Wu C.T. Yeh 1996B;Activation Energy for Thermal Decomposition of Nitric Oxide  Intern. J. Chem. Kinetics2889NGK. Wurm R. Kliese Y. Hong B. Rottger Y. Wei H. Neddermeyer I.S.T. Tsong 1994b\Evolution of surface morphology of Si(100) during oxygen adsorption at elevated temperatures Phys. Rev. B50 1567K. Yagi 1993b[Reflection electron microscopy: studies of surface structures and surface dynamic processesSurf. Sci. Rept.17 305$V.A. Yakovlev Q. Liu E. Irene 1992immersion ellipsometryJ. Vac. Sci. Technol. B10 427@9T. Yamazaki S. Miyazaki C.H. Bjorkman M. Fukuda M. Hirose 199482IR spectra of ultra-thin SiO2 grown on Si surfaces ,&S.P. Murarka K. Rose T. Ohmi T. SeidelJDInterface Control of Electrical, Chemical, and Mechanical Properties MRS 318 419Z.Q. Yao 1995jcThe nature and distribution of nitrogen in silicon oxynitride grown on Si in a nitric oxide ambientJ. Appl. Phys.78 2906 ONO4.Z.Q. Yao H.B. Harrison S. Dimitrijev Y.T. Yeow 1995 IEEE Electron Device Lett.16 345 ONO S. Zafar Q. Liu E.A. Irene 1995 FN businessJ. Vac, Sci. Technol. A1347F@K.Z. Zhang M.M. Banaszak-Hall J.E. Bender-IV S. Lee F.R. McFeely 1996RKSi2p Core-level Shifts at the Si(100)-SiO2 Interface: An Experimental Studyo Phys. Rev. B54 7686 J.B. Zhou 1993 Rutgers University PhD Thesis:B^rhr9876P5zfG4Xv32|10/T. Hattori K. Onishi 1994 .'S.P. Murarka K. Rose T. Ohmi T. SeidelJDInterface Control of Electrical, Chemical, and Mechanical Properties MRS 31861 MRS Symposium Proceedings T. Hattori 19952+Chemical Structure of the SiO2/Si interface,&CRC Crit. Rev. Solid State Mater. Sci.20 339:4R.I. Hedge P.J. Tobin K.G. Reid B. Maiti S.A. Ajuria 1995TMGrowth and Surface Chemistry of Oxynitride gate dielectric using nitric oxideAppl. Phys. Lett.66 2882 ONO C.R. Helms B.E. Deal 1988~9The Physics and Chemistry of Si and the Si/SiO2 Interfaceq. @ q/q NY  Plenum Press C.R. Helms B.E. Deal 1993>The Physics and Chemistry of SiO2 and the Si-SiO2 Interface,IIq @ q!q0 @ q1q NY  Plenum Press 237 C.R. Helms E.H. Poindexter 1994>8The Si-SiO2 system: its microstructure and imperfectionsRep. Prog. Phys.57 791:4G.S. Higashi R.S. Becker Y.J. Chabal A.J. Becker 1991XQComparison of Si(111) surfaces prepared using aqueous solution of NH4F versus HF.J. Appl. Phys.58 1656G.S. Higashi Y.J. Chabal 19932+Surface Chemical Composition and Morphology W. Kern4-Handbook of Silicon Wafer Cleaning Technology NJ Noyes Publications 433Silicon cleaningNew, 15 Sep 1993>7W.L. Hill E.M. Vogel V. Misra P.K. McLarty J.J. Wortman 1996hbLow Pressure Rapid Thermal CVD of Oxynitride Gate Dielectrics for N-channel and P-channel MOSFET's"IEEE Trans. Electron Devices4315 ONOnLEF.J. Himpsel F.R. McFeely A. Taleb-Ibrahimi J.A. Yarmoff G. Hollinger 1988 Phys. Rev. B38 608482F.J. Himpsel D.A. Lapiano-Smith J.F. Morar J. Bevk 1993f"Local Bonding at SiO2/Si Interfaceq @ qq C.R. Helms B.E. Deal?The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, IIq @ q!q0 @ q1q NY  Plenum Press 237 F.G. Himpsel 1994:3Electronic structure of semiconductor by interfaces Surf. Sci.Surface science299/300 525 &M. Hirose T. Yasaka S. MiyazakiP 1991Semicond. Res.36 263>8M. Hirose M. Hiroshima T. Yasaka M. Takakura S. Miyazaki 1993B;Ultrathin Gate Oxide Grown on H-terminated Silicon SurfacesMIcroel. Engineering223M.F. Hochella A.H. Carim 1988Si2p escape length Surf. Sci. 197/ L260A.M. Hoff J. Ruzyllo 19884.Atomic oxygen and thermal oxidation of siliconAppl. Phys. Lett.52 1264,&U. Hoffer P. Morgen W. Wurth E. Umbach 1989@9Initial Stages of Oxygen adsorption on Si(111): Precursor Phys. Rev. B40 1130 G. Hollinger F.J. Himpsel 1983 Phys. Rev. B28 3851@:G. Hollinger J.F. Morar F.J. Himpsel G. Hughes J.L. Jordan 1986< O1s for SiO2q @ q Surf. Sci. 168 609XRG. Hollinger E. Bergignat H. Chermette F. Himpsel D. Lopez M. Lannoo M. Bensoussan 1987 Phil. Mag. B55 735 P.H. Holloway 1981JCChemisorption and oxide formation on metals: oxygen-nickel reactionJ. Vac. Sci. Technol.18 653&Y. Homma M. Suzuki N. Yabumoto 1992F?Observation of atomic step morphology on silicon oxide surfacesJ. Vac. Sci. Tech. A10 2055& T. Horie Y. Takakuwa N. Miyamoto 1994LE2D growth and decomposition of initial thermal SiO2 layers on Si(100)Jpn. J. Appl. Phys.33 4684 UPSS.M. HuP 1974VOFormation of stacking faults and enhanced diffusion in the oxidation of siliconJ. Appl. Phys.45 1567("oxidation mechanism, interstitials New:4R.J. Hussey D.A. Bisaillion G.I. Sproule M.J. Graham 1993HAThe growth and transport in thermal oxide films formed on silicon Corros. Sci.35 917N2+H. Hwang W. Ting B. Maiti D.L. Kwong J. Lee 1990Appl. Phys. Lett.57 1010 ONO(!H. Ibach H.D. Bruchmann H. Wagner 1982EELS, Si Appl. Phys. A29 113<&H. Ibach H. Wagner D. Bruchmann  1982H2O on Si(100)Solid State Commun.42 457G.M. Ingo N. Zacchetti 1990F?XPS on the growth model of a-SiNx and Si and N chemical bondingHigh Temp. Sci.28 137$E.A. Irene Y.J. van_der_Meulen 1974J. Electrochem. Soc. 123 1380 E.A. Irene 1983J. Appl. Phys.54 5416,N Komiya19969r Kompa1994{ Kondoh19989? Koshikawa1991Kosowsky1995? Kotani19919: Kotecki1993 Koudijs1991X Kouvatsos1996U Kouzaki1994Kouzazki1993" Koyama1996 Krasilnikov1989 Krisch19944J Krisch19944&Krivanek19855 Kruchinin1989d Kubachevski1974I Kubler1989 Kudoh1993 Kuiper19949^ Kumar1997 Kwong1990 Kwong1991 Kwong1994 Kwong1995 Kwong1996 LaBruna1995Lakhotia1994 Lander1962Landheer1995B Landsberger19907 Lannoo19877% Lanzerotti19893 Lapiano-Smith1993Latyshev1989C Lawless1974  Lebedinski1991  Lebedinski19941 Lee1990 Lee1991 Lee1994, Lee1996- Lee1996. Lee19965 Lee19965 Lee19965 Lee1996^ Lee1997k LeGoues1985E Leibsle1988P Lenahan1996| Lennard1994 Lennard1994 Lennard1994J Lennard1994 Lennard1995D Leroy1987 Lewis1979j Lewis1986k Lewis1988 Lewis1990 Li19933 Li1997j Liehr1986i Liehr1987k Liehr1988 Liehr1990& Liliental1985^ Lin1997g Lindau1986Lindhard1953Lindhard1961 Liu1992 Liu1994 Liu19951 Liu1996k Loenen19855l Loenen1985Z Loirat1985BLombardi199327 Lopez1987H Lowell1994 Lozano1995F Lu1993) Lu19949 Lu1994s Lu1994s Lu1995 Lu19959 Lu19959 Lu1995 Lu1996 Lu19969 Lu1996% Lu199690 Lu1996M Lu1997Q Lu1997S Lu199794 Lu19979V Lu1997W Lu199793 Lu19979v Lu1997GLucovsky1988Lucovsky1990Lucovsky1994 Lucovsky19959H Lupke1993I Lutz19893 Lyo1991 Lyon19859 Ma19941' Ma199594 Madey1997Madhukar19799{ Maex19989 Magee1988R Magee1996_ Maillot1986 Maiti1990 Maiti1995Makihara19955= Malik1993 Manchanda1994J Manchanda1994@ Mannami1994 Maserjian1979J Massoud1985 Massoud1985 Massoud1995|Massoumi1994- Matsumoto1995 Matsumoto1996_Matsuoka1996 Matzke1995b Mayer1982v McCaffrey19972 McFeely1988 McFeely1993 McFeely1994, McFeely1996- McFeely1996. McFeely1996{ McGuire1992McHargue1994 McLarty1996 Meda19959Y Meiner1926 Memmert1992Q Memmert1992R Memmert1993 Memmert1994 Memmert1994c Meng19939 Metois19955 Meul198917 Mii1995 Misra1994 Misra1996|Mitchell1994-|Mitchell1994- Mitchell1994oMiyamoto1993Miyamoto19949pMiyamoto1994qMiyamoto1997? Miyashita1991@ Miyashita19924Miyazaki1991GMiyazaki1993Miyazaki1994 Mnch19929{ Mohadjeri1998K Moharir1989 Molire1947 Monch1994 Morar19863 Morar1993 Morgen1989 Morgen1989  Morita1989L Morita1990M Morita19949Morrison1962 Moslehi1985 Mott19489N Mott19879O Mott19899 Muller19949w Murrell1991Nakamura19955N Nakanishi1996 Nakao1996P Namiki1989Z Narayan1987A Neddermeyer1992 Neddermeyer1994 Nelson19878f Nelson19919Q Neuwald1992R Neuwald1993 Neuwald1994S Nguyen1994T Niehus19921Nienhaus19949o Nihei1993p Nihei1994q Nihei1997 Niimi1995< Niwa19929 Niwa19931 Niwa19939U Niwa1994m Niwa19949 Nohira1993" Nomura1996! Norton19887 Nowak1995s O'Mara1990 Ogino1995E Ogura1991Ohdomari1991N Ohkubo19969h Ohmae1993 Ohmi19898L Ohmi19909? Ohmi19911@ Ohmi1992 Ohmi1993M Ohmi19949 Ohmi1995 Ohno19909 Ohring19811@ Ohshima1994O Ohta19959_ Ohtsuka1996L Ohwada19909 Okada1993U Okada1994 Okada1994 Onishi1993/ Onishi19944 Onishi1994V Ono1993W Ourmazd1987[ Ourmazd1991{ Parikh19922: Parsons1993 Pashutski1989 Pasquarello1995U Pasquarello1995 Pasquarello1996{ Patnaik1992 Patrin199331 Paulson1996} Pease1955 Pechman1995c Pecquet1993 Peden1993S Pellegrino1994tX Pelz1991rc Pelz19939 Pelz19949 Pelz19959y Penn19888 Penner1996 Perera19955Perera1995, December 11Y Pershan1991 Pershan1995! Petrak1975 Pfeffer1981Pianetta1995 Picraux1982 Pietsch1993= Pirooz19939J Plummer1985 Plummer1985 Plummer19869 Poindexter1989, Poindexter19949+ Poindexter1995y Powell1988 Prabhakaran1995: Quinlan1993sRabalais1994Rabalais1994-YRabedeau1991< Raghavachari1993-! Raider1975 Raider19884 Raider1988 Ranke1993ZRavindra1987Ravindra19929 Reid19955[ Renaud1991W Rentscheir1987ntscheir1987 02lXfe4r\:dVb\w~vc'hNih`LbaF`_^b F. Rochet B. Agius S. Rigo 1984HAAn o-18 study of the oxidation mechanism of silicon in dry oxygenJ. Electrochem. Soc. 131h 914isotope oxidation 0.1 - 100 Torr 50 -260 A, 930 C, NRA 2 kind of spicies: near interface oxygen near oxide surface Mechanism - motion of network oxygen NewRLF. Rochet S. Rigo M. Froment C. d'Anterroches C. Maillot H. Roulet G. Dufour 1986ZSThe Thermal Oxidation of Silicon: The Special Case of the Growth of Very Thin Films Adv. Phys.35 339isotope oxidation0)E. Rosencher A. Straboni S. Rigo G. Amsel 1979Appl. Phys. Lett.34 254isotope oxidation, Si New(!A. Ross M. Bergkvist C.G. Ribbing 1988TNDetermination of Si/SiO2 interface roughness by diffuse scattering measurement Appl. Optics27 4660New, 15 Sep 1993F.M. Ross J.M. Gibson 1992LFDynamic observation of interface propagation during silicon oxidation.Phys. Rev. Lett.68 1782("F.M. Ross J.M. Gibson R.D. Twesten 1994NGDirect observations of interface motion during the oxidation of silicon Surf. Sci. 310 243W.A. Rosser H. Wisei 1956J. Chem. Phys.24 4934-G. W. Rubloff K. Hofmann M. Liehr D. R. Young 1987Phys. Rev. Lett.58 2379 G. W. Rubloff 1990J. Vac. Sci. Technol.A8 1857$N.S. Saks D.I. Ma W.B. Fowlerr 19950*Nitrogen depletion during oxidation in N2OAppl. Phys. Lett.67 374t ono6S.A. Schafer S.A. Lyon 1985:3New model of the rapid initial oxidation of siliconAppl. Phys. Lett.47 154,&J. Seiple J. Pecquet Z. Meng J.P. Pelz 1993XRElevated temperature oxidation and etching of Si(111)7x7 surface observed with STMJ. Vac. Sci. Tech. A11 1649J. Seiple J.P. Pelz 1994VPSTM study of oxide nucleation and oxid. induced roughening at elev. T on Si(100)Phys. Rev. Lett.73 999J. Seiple J.P. Pelz 1995$Evolution of Surface RoughnessJ. Vac. Sci. Tech. A13 772@:N. Shimizu Y. Tanishiro K. Kobayashi K. Takayanagi K. Yagi 1985 REMUltramicroscopy18 453A.A. Shklyaev T. Suzuki 1995BR.G. Smeenk R.M. Tromp H.H. Kersten A.J.H. Boerboom F.W. Saris 1982Nucl. Instr. and Methods 195 581F.W. Smith G. Ghidini 1982J. Electrochem. Soc. 129 1300 C.J. Sofield A.M. Stoneham 19956/Oxidation of silicon: the VLSI gate dielectric?Semic. Sci. Technol.10 215JDJ.H. Stathis D.A. Buchanan D.L. Quinlan A.H. Parsons D.E. Kotecki 1993D=Interface defects of ultrathin rapid-thermal oxide on siliconAppl. Phys. Lett.  62 2682(!P. Statiris H.C. Lu T. Gustafsson 1994Phys. Rev. Lett.72 3574("P. Statiris H.C. Lu T. Gustafsson 1994MEIS of Au on Ni(001) Phys. Rev. B submittedhaF.C. Stedile I.J.R. Baumvol J.J. Ganem S. Rigo I. Trimaille G. Battistig W.H. Schulte H.W. Becker 1994haIBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaningNucl. Instr. Meth. B85 248,%isotope oxidation with 20A resolution ("A. Stockhausen T.U. Kampen W. Mnch 19922+Oxidation of clean and H-passivated Si(111)Appl. Surf. Sci. 56-58 795 Cabrera-Mott.'A.M. Stoneham C.R.M. Grovenor A. Cerezo 1987@:Oxidation and the structure of the silicon/oxide interface Phil. Mag. B55 201oxidation mechanism New&Y.-K. Sun D. J. Bonser T. Engel 1991 Phys. Rev. B43 14309rD.G.J. Sutherland H. Akatsu M. Copel F.J. Himpsel T. Callcott J.A. Carlisle D. Ederer J.J. Jia I. Jimenez R. Perera D.K. Shuh L.J. Terminello W.M. Tong 1995XQStoichiometry Reversal in the Growth of Thin Oxynitride Films on Si(100) SurfacesJ. Appl. Phys.78 6761 ONO\D.G.J. Sutherland H. Akatsu M. Copel F.J. Himpsel T. Callcott J.A. Carlisle D. Ederer J.J. Jia I. Jimenez R. Perera D.K. Shuh L.J. Terminello W.M. Tong1995, December 1XQStoichiometry Reversal in the Growth of Thin Oxynitride Films on Si(100) SurfacesJ. Appl. Phys.in press0*M. Suzuki Y. Homma Y. Kudoh N. Yabumoto 1993^WRoughness evaluation of thermally oxidized Si(111) surface by scanning force microscopy$Jpn. J. Appl. Phys.32 1419@9B.S. Swartzentruber C.M. Matzke D.L. Kendall J.E. Houston 1995jcSTM measurements of step-flow kinetics during atom removal by low-energy ion bombardment of Si9001) Surf. Sci. 329831997 Abel19959* Aboaf1971  Abstreiter1989^ Agius1984 Aguiar19955 Ajuria1994 Ajuria1995 Akatsu19951Akatsu1995, December 1eO Akimoto1995 Akutsu1991< Akutsu19929 Aldao1995 Alfonso1995Alkemade1987S Amirtharaj1994t` Amsel1979Andersen1977Andersen19809BAnderson19932w Aono19961 Arakawa1990 Aseev1989Atkinson1985 Avouris1987 Avouris1990 Avouris1991 Avouris1992 Avouris1992N Awaji1996A Badt19929) Baird1981Baklanov1989{Baklanov19988k Balk19859 Balk1988, Banaszak-Hall1996- Banaszak-Hall1996. Banaszak-Hall1996 Banaszak-Holl1993 Banaszak-Holl1994 Batson1993 Batson19944$ Battistig1993e Battistig1994e Baumvol1994 Baumvol1996$ Baumvol1996& Baumvol19960 Becker199110 Becker19911e Becker19944 Bedrossian1991 Bedrossian1993 Behm19929Q Behm19929R Behm19939 Behm19949 Behm19949 Bejina1995- Bender-IV1996. Bender-IV1996; Bennett19927 Bensoussan19877 Bergignat1987F Bergkvist1988Y Berk19919 Bermond1995 Bernard1983 Besenbacher1980W Bevk1987r[ Bevk199193 Bevk19933 Bevk19959 Bhat1994 Bhat1995 Bhattacharyya1985Biersack1992 Bisaillion1993IBischoff19893Bjorkman1990Bjorkman1994 Blank1987  Blank1988bBoerboom1982 Bohr1948-I Bolmont1989Bonderup19809f Bonser19919l Bonser1991 Bonser19929~ Bonser1992 Bonszo19877L Boone1993  Borman1991  Borman1994 Borman1994 Borman1994H Bottomley1993v Brar1997 Brasen1994 Brasen19944J Brasen19949 Brasen1995 Brasen19969S Brasen19979V Brasen19971r Bratu1994[ Braun1988! Brennan1988 Briere1992x Briggs1983Y Briner1926a Brown1976Browning19944 Bruchmann1982 Bruchmann1982  Brunner1989s Bu19949 Bu1994:Buchanan1993Buchanan1994Buchanan19957Buchanan1995 Buhrman1993# Buhrman1995/ Buhrman1996e C.R.Helms1987  Cabrera1948 Cahill19922 Cahill1992Callcott19959Callcott1995, December 1  Cao19950 Cao1996 Car1995U Car1995 Car1996Z Caralp1985 Carim1985 Carim1987z Carim1988Carlisle19959Carlisle1995, December 1  Carr1993# Carr1995 Cartier1993 Cartier1994c Cassuto1971f Cerezo19878 Cerofolini1995 Chabal1984 Chabal19840 Chabal19911 Chabal19938 Chabal199391 Chabal19933< Chabal1993 Chander1993 Chander1995SChandler-Horowitz1994K Chandorkar1989d Chart1974 Chen199617 Chermette1987 Cheung1979 Chew1988g Chiang1986E Chiang19888^ Chou19977^ Choudhury1997 Christman1984< Christman1993 Condon19818P Conley1996r Copel1991 Copel1995Copel1995, December 1 Copel1996Costello1984 Cristy19818_ d'Anterroches1986D'Evelyn1987H Dadap1994k Dallaporta1988 Dallaporta1990 daSilva1995\Database1994= Davenport1993 Deal19650 Deal19888 Deal1988 Deal19899 Deal19933 Delarious1989H Deng19944 Diebold1993H Diebold1994 DiMaria1993 Dimitrijev1993 Dimitrijev1995  Dimitrijev1996> Doremus1993 Doremus1994 Doris1993H Doris1994H Downer1994H Driel1993( Du1989_ Dufour19866 Dumas1993 Dunham1986 Dunham1988 Dunn19941 Dutta1992 Ederer19959Ederer1995, December 1  Edwards1987u Edwards1997 Elie19959# Ellis1995/ Ellis1996" Endoh1996 Engel1987f Engel1991l Engel1991 Engel1992m Engel1992~ Engel1992 Engel1993fEngstrom1991Engstrom1992LEvans-Lutterodt1993Evans-Lutterodt1994JEvans-Lutterodt1994 Fair1981& Fathy1985Z Fathy1987 Fehlner1986 Feigl1988 Feil19941~ Feldman1978 Feldman1979 Feldman1982+ Feldman1982 Feldman1988t Feldman1994 Feldman1994 Feldman1994J Feldman1994 Feldman1995 Feldman1996v Feldman19978 Felix1996  Feltz1992Q Feltz1992R Feltz1993 Feltz1994 Fenter1991& Ferry1985!Fisher-Colbrie1988=G Fitch1988 Fitch1990  Fleetwood1996 Folman19899! Fouss1988[ Fouss1991" Fowler1991r' Fowler19957 Frank1995Y Freer1991[ Freer1991 Freer1995r1995%r, b >tjt6;&$ nNTxnB*l 199782The National Technology Roadmap for Semiconductors ("Semiconductor Industry Association J.A. Aboaf 1971HAFormation of 20-25 A Thermal Oxide Films on Silicon at 950-1140oCcJ. Electrochem. Soc.c 118 1370 ONO$H. Akutsu Y. Sami I. Ohdomari 1991HEvalution of SiO2/(001)Si interface roughness with HRTEM and simulation.q @ qq Phys. Rev. B44 161660P.F.A. Alkemade W.C. Turkenburg W.F. van der Weg 1987RLThe energy loss of medium energy He+ ions backscattered from Cu(111) surfaceNucl. Instr. Meth. B28 161 losses H.H. Andersen J.F. Ziegler 1977:3Hydrogen Stopping Powers and Ranges in All Elements  J.F. Ziegler0)The Stopping and Ranges of Ions in Matter New York Pergamon Press3.(W.R. Anderson D.R. Lombardi R.G. Wheller 1993JDDetermination of Si/SiO2 interface roughness using weak localizationIEEE Electr. Dev. Lett.14 351interface roughnessNew, 15 Sep 1993 A. Atkinson 1985TMTransport processes during the growth of oxide films at elevated temperaturesRev. Mod. Phys.57 437(!Ph. Avouris F. Bonszo R.J. Hamers 1987J. Vac. Sci. Technol. B5 1387 ONO Ph. Avouris 19904-Atom resolved surface Chemistry using the STMJ. Phys. Chem.94 2246Ph. Avouris In-Whan Lyo 1991Si Surf. Sci. 2421Ph. Avouris D. Cahill 1992LESTM studies of Si(100)2x1 oxidation: defect chemistry and Si ejectionUltramicroscopy 42/44 838New, 25 Oct 1993F?N. Awaji Y. Sugita T. Nakanishi S. Ohkubo K. Takasaki S. Komiya 1996F?High-precision X-ray Reflectivity Study of Ultrathin SiO2 on SiJ. Vac. Sci. Technol. A14 971>8M.R. Baklanov V.N. Kruchinin S.M. Repinsky A.A. Shklyaev 1989 React. Solids71 P. Balk 1988VThe Si-SiO2 System  @   Amsterdam Elsevier 1&M.M. Banaszak-Holl F.R. McFeely 1993ASi/SiO2 interface : new structures and well-defined model systemsq @ qqPhys. Rev. Lett.71 2441("XPS, H8Si8O12 as a probe moleculeNew, 27 oct, 1993,&M.M. Banaszak-Holl S. Lee F.R. McFeely 1994XRCore-level photoemission and the structure of the Si/SiO2 interface: A REAPPRAISALAppl. Phys. Lett.65 1097 P.E. Batson 1993d^Simultaneous STEM imaging and electron energy loss spectroscopy with atomic-column sensitivity Nature 366 727,%P.E. Batson N.D. Browning D.A. Muller 1994BSurface reconstruction in layer-by-layer sputtering of Si(111) Phys. Rev. B44 13783P. Bedrossian E. Kaxiras 1993>8Symmetry and Stability of Solitary Dimer Rows on Si(100)Phys. Rev. Lett.70 2589 J.M. Bennett 1992@:Recent developments in surface-roughness characterization.Meas. Sci. and Tech.3$ 111960J.M. Bermond J.J. Metois J.C. Heyraud C. Alfonso 1995rlReflection Electron Microscopy Studies of the Step Meandering and Evaporation on Vicinal Surfaces of Silicon Surf. Sci.331-333 855ZTstep flow for Si(111) step flow, hole nucleation and kinetic rougheninhg for Si(100)  S. Bernard 1983:4Adsorption on Metal Surfaces: An Integrated Approach  Amsterdam Elsevier.(F. Besenbacher J.U. Andersen E. Bonderup 1980F?Straggling in energy loss of energetic hydrogen and helium ionsNucl. Instr. Meth. 1681*#M. Bhat G.W. Yoon J. Kim D.L. Kwong 1994Appl. Phys. Lett.64 2116 ONO@9M. Bhat L.K. Han D. Wristers J. Yan D.L. Kwong J. Fulford 1995VOEffect of Chemical Composition on the Electrical properties of NO-nitrided SiO2Appl. Phys. Lett.66 1225 ONO*$C.H. Bjorkman J.T. Fitch G. Lucovsky 1990stress and DitAppl. Phys. Lett.56 1983J. Blank 1987 Phil. Mag. B55 685J. Blank 1988z5The Physics and Chemistry of Si and Si/SiO2 Interfaceq* @ q+q C.R. Helms B.E. Deal NY  Plenum Press 1N. Bohr 1948 straggling& Mat. Fys. Medd. Dan. Vid. Selsk.18 No.8<5V.D. Borman E.P. Gusev Yu. Yu. Lebedinski V.I. Troyan 199182Direct observation of layer-by-layer growth ......Phys. Rev. Lett.67 2387<5V.D. Borman E.P. Gusev Yu. Yu. Lebedinski V.I. Troyan 1994"Silicon oxidation (kinetics) Phys. Rev. B49 5415:3V.D. Borman O.V. Tapinskaya V.N. Tronin V.I. Troyan 1994,&Dynamics of crystal surface rougheningPhys. Low-Dim. Struct.6P7:3V.D. Borman O.V. Tapinskaya V.N. Tronin V.I. Troyan 1994.(Dynamics of adsortion-induced roughening JETP Lett.60 718"P. Bratu K.L. Kompa U. Hofer 1994RKKinetics of oxygen dissociation on Si(111)7x7 investigated with optical SHG Phys. Rev. B49 14070Aat low coverages lifetime of mol. O2 is 50min at high cov. ~15minq# @ q$q!02~lXfe4r\:dVb\w~vc'hNih`LbaF`_^b F. Rochet B. Agius S. Rigo 1984HAAn o-18 study of the oxidation mechanism of silicon in dry oxygenJ. Electrochem. Soc. 131h 914isotope oxidation 0.1 - 100 Torr 50 -260 A, 930 C, NRA 2 kind of spicies: near interface oxygen near oxide surface Mechanism - motion of network oxygen NewRLF. Rochet S. Rigo M. Froment C. d'Anterroches C. Maillot H. Roulet G. Dufour 1986ZSThe Thermal Oxidation of Silicon: The Special Case of the Growth of Very Thin Films Adv. Phys.35 339isotope oxidation0)E. Rosencher A. Straboni S. Rigo G. Amsel 1979Appl. Phys. Lett.34 254isotope oxidation, Si New(!A. Ross M. Bergkvist C.G. Ribbing 1988TNDetermination of Si/SiO2 interface roughness by diffuse scattering measurement Appl. Optics27 4660New, 15 Sep 1993F.M. Ross J.M. Gibson 1992LFDynamic observation of interface propagation during silicon oxidation.Phys. Rev. Lett.68 1782("F.M. Ross J.M. Gibson R.D. Twesten 1994NGDirect observations of interface motion during the oxidation of silicon Surf. Sci. 310 243W.A. Rosser H. Wisei 1956J. Chem. Phys.24 4934-G. W. Rubloff K. Hofmann M. Liehr D. R. Young 1987Phys. Rev. Lett.58 2379 G. W. Rubloff 1990J. Vac. Sci. Technol.A8 1857$N.S. Saks D.I. Ma W.B. Fowlerr 19950*Nitrogen depletion during oxidation in N2OAppl. Phys. Lett.67 374t ono6S.A. Schafer S.A. Lyon 1985:3New model of the rapid initial oxidation of siliconAppl. Phys. Lett.47 154,&J. Seiple J. Pecquet Z. Meng J.P. Pelz 1993XRElevated temperature oxidation and etching of Si(111)7x7 surface observed with STMJ. Vac. Sci. Tech. A11 1649J. Seiple J.P. Pelz 1994VPSTM study of oxide nucleation and oxid. induced roughening at elev. T on Si(100)Phys. Rev. Lett.73 999J. Seiple J.P. Pelz 1995$Evolution of Surface RoughnessJ. Vac. Sci. Tech. A13 772@:N. Shimizu Y. Tanishiro K. Kobayashi K. Takayanagi K. Yagi 1985 REMUltramicroscopy18 453A.A. Shklyaev T. Suzuki 1995BR.G. Smeenk R.M. Tromp H.H. Kersten A.J.H. Boerboom F.W. Saris 1982Nucl. Instr. and Methods 195 581F.W. Smith G. Ghidini 1982J. Electrochem. Soc. 129 1300 C.J. Sofield A.M. Stoneham 19956/Oxidation of silicon: the VLSI gate dielectric?Semic. Sci. Technol.10 215JDJ.H. Stathis D.A. Buchanan D.L. Quinlan A.H. Parsons D.E. Kotecki 1993D=Interface defects of ultrathin rapid-thermal oxide on siliconAppl. Phys. Lett.  62 2682(!P. Statiris H.C. Lu T. Gustafsson 1994Phys. Rev. Lett.72 3574("P. Statiris H.C. Lu T. Gustafsson 1994MEIS of Au on Ni(001) Phys. Rev. B submittedhaF.C. Stedile I.J.R. Baumvol J.J. Ganem S. Rigo I. Trimaille G. Battistig W.H. Schulte H.W. Becker 1994haIBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaningNucl. Instr. Meth. B85 248,%isotope oxidation with 20A resolution ("A. Stockhausen T.U. Kampen W. Mnch 19922+Oxidation of clean and H-passivated Si(111)Appl. Surf. Sci. 56-58 795 Cabrera-Mott.'A.M. Stoneham C.R.M. Grovenor A. Cerezo 1987@:Oxidation and the structure of the silicon/oxide interface Phil. Mag. B55 201oxidation mechanism New&Y.-K. Sun D. J. Bonser T. Engel 1991 Phys. Rev. B43 14309r& Y. -K. Sun D. J. Bonser T. Engel 1992(!TPD studies of SiO2 decomposition.J. Vac. Sci. Technol.i A 10 2314D.G.J. Sutherland H. Akatsu M. Copel F.J. Himpsel T. Callcott J.A. Carlisle D. Ederer J.J. Jia I. Jimenez R. Perera D.K. Shuh L.J. Terminello W.M. Tong 1995XQStoichiometry Reversal in the Growth of Thin Oxynitride Films on Si(100) SurfacesJ. Appl. Phys.78 6761 ONO\D.G.J. Sutherland H. Akatsu M. Copel F.J. Himpsel T. Callcott J.A. Carlisle D. Ederer J.J. Jia I. Jimenez R. Perera D.K. Shuh L.J. Terminello W.M. Tong1995, December 1XQStoichiometry Reversal in the Growth of Thin Oxynitride Films on Si(100) SurfacesJ. Appl. Phys.in press0*M. Suzuki Y. Homma Y. Kudoh N. Yabumoto 1993^WRoughness evaluation of thermally oxidized Si(111) surface by scanning force microscopy$Jpn. J. Appl. Phys.32 1419@9B.S. Swartzentruber C.M. Matzke D.L. Kendall J.E. Houston 1995jcSTM measurements of step-flow kinetics during atom removal by low-energy ion bombardment of Si9001) Surf. Sci. 32983ideB&M.M. Moslehi S.C. Shatas K.C. Saraswat  1985 AThin SiO2 Insulators Grown by Rapid Thermal Oxidation of Silicon  @  .Appl. Phys. Lett. 47  1353  N.F. Mott  1987"On the oxidation of silicon Phil. Mag. B55  1170)N.F. Mott S. Rigo F. Rochet A.M. Stoneham 1989Oxidation of silicon Phil. Mag. B.  60  189*#M.P. Murrell C.J. Sofield S. Sugden 1991("Silicon Transport during oxidation Phil. Mag. B63 1277 Phil. Mag. B"isotope oxidation, HF + NRAA. Namiki K. Tanimoto 1989LFXPS study of the early stages of oxidation of Si(100) by atomic oxygen Surf. Sci.:4U. Neuwald H.E. Hessel A. Feltz U. Memmert R.J. Behm 1992? Native oxide by STMAppl. Phys. Lett. 60 1307{pR#"!n P t|~~Xfj/0P( ~zTA. Diebold B. Doris 1993Surf. Interface Anal.20 127.'S. Dimitrijev D. Sweatman H.B. Harrison 1993 modelAppl. Phys. Lett.62 1539 ONO"S. Dimitrijev H.B. Harrison. 1996*$Modeling of growth of thin si oxidesJ. Appl. Phys.80 2467R.H. Doremus S.C. Kao 1994B;Ellipsometric study of the interface between Si ands silica ,&S.P. Murarka K. Rose T. Ohmi T. SeidelJDInterface Control of Electrical, Chemical, and Mechanical Properties MRS 31853$H. Du R.E. Tressler K.E. Spear 1989VOThermodynamics of the Si-N-O System and Kinetic Modelling of Oxidation of Si3N4J. Electrochem. Soc. 136 3210 ONO&P. Dumas Y.J. Chabal P. Jacob 1993~xVibrational properties of H/Si(111)-(1x1) surfaces: infrared absorption and electron energy loss spectroscopic studies.Appl. Surf. Sci.  65/66 580S.T. Dunham J.D. Plummer 1986J. Appl. Phys.59 2541 S.T. Dunham 1988,&Intersitial fluxes during si oxidation C.R. Helms B.E. Deal;The Physics and Chemistry of SiO2 and the Si-SiO2 Interfaceq @ q!q0 @ q1q NY  Plenum Press 477T. Dutta N.M. Ravindra 19920*Silicon oxidation in the Thin oxide regimePhys. Stat. Sol. 134 447n A.H. Edwards 1987z5Theory of the Pb center at the <111>Si/SiO2 interfaceq* @ q+q Phys. Rev. B.  36  9638K.A. Ellis R.A. Buhrman 1996B7Characterization of nitrided SiO2 thin films using SIMSAppl. Surf. Sci.104/105 379 ono"H. Fukuda T. Arakawa S. Ohno 1990 ONOJpn. J. Appl. Phys.29 L2333 ONONGJ.E. Fulghum R. Stokell G. McGuire B. Patnaik N. Yu Y.J. Zhao N. Parikh 1992`0DEtermination of Si2p attenuation length in SiO2q/ @ q$J. Electr. Spectr. Rel. Phen.60 117)\rk^jbD|E,C^Bxd^dZ"tvn`A}b@|5?R>^=L8 ]`mP\<gV1R|;$E. Irene   1988  *#Models for the oxidation of silicon:Crit. Rev. Sol. St. Mat. Sci.  14   175  E. Irene 1993:3Application of spectoscopic ellips. to microelectr.RThin Sol. Films 23396 E.A. Irene 1995$FN tunneling and new kinetics SISC meeting:4E.A. Irene Q. Liu W.M. Paulson P.J. Tobin R.I. Hedge 1996VOMeasurements of N in Nitrided Oxides using Spectroscopic Immersion EllipsometryJ. Vac. Sci. Technol. B14 1697 onoA. Ishizaka Y. Shiraki 1986J. Electrochem. Soc. 133p 666s<6P. Jakob Y.J. Chabal K. Raghavachari S.B. Christman 1993zDiscrite nature of inhomogeneity on stepped H/Si(111) surfaces: Spectroscopic identification of individual terrace sizes. Phys. Rev. B47 6839("O. Jaoul F. Bejina F. Elie F. Abel 1995& Silicon Self-Diffusion in QuartzPhys. Rev. Lett.74 2038 G.E. Jellison 1991reflective indexJ. Appl. Phys.69 1991K. E. Johnson T. Engel 1992Phys. Rev. Lett.69 339K. Jones 1973(!Comprehensive Inorganic Chemistry Pergamon Oxford2H. Kageshima M. Tabe 1994\UFirst-Principle Calculation of Core-Level Energy Shifts on the Init. Stage of Si(111) &I. Ohdomari M. Oshima A. Hiraki*#Control Of Semiconductor Interfaces  Amsterdam Elsevier 2272G. Kamarinos P. Felix  1996 T8How will Physics be Involved in Silicon Microelectronics & J. Phys. D 29  487 Y. Kamigaki Y. Itoh 1977J. Appl. Phys.48 2891S. Kamohara Y. Kamigaki 1991VOActivation Energy Enhancement during Initial Silicon_Oxide growth in Dry OxygenJ. Appl. Phys.69 7871oxidation mechanism newS.C. Kao R.H. Doremus 1993PJOxidation of silicon in oxygen: measurememt of film thickness and kinetics C.R. Helms B.E. Deal;The Physics and Chemistry of SiO2 and the Si-SiO2 interfaceq @ q!q0 @ q1q N.Y.  Plenum Press23$H. Kato K. Sawabe Y. Matsumoto 1996 Surf.Sci. 35143Y. Kido T. Koshikawa 1991NGEnergy straggling for medium-energy H+ beams penetrating Cu, Ag, and Pt Phys. Rev. A443 1759<6K. Kim Y.H. Lee M.S. Suh C.-J. Youn K.-B. Lee H.J. Lee 199681Thermal Oxynitridation of Silicon in N2O AmbientsJ. Electrochem. Soc. 143 3372 ono, model&K. Kimura K. Ohshima M. Mannami  1994 Monolayer analysis in RBSAppl. Phys. Lett.64 2232G.K. Kinchin R.S. Pease 1955 ion demageRep. Progr. Phys. 1812+R. Kliese B. Rottger D. Badt H. Neddermeyer 1992^WReal-time STM investigation of the initial stages of oxygen interaction with Si(100)2x1Ultramicroscopy42/44 A 824New, 25 Oct 1993(!Y. Kobayashi Y. Shinoda K. Sugii  1990Jpn. J. Appl. Phys.29 1004Y. Kobayashi K. Sugii 1992Void formation, air AFMJ. Vac. Sci. Technol. A 10 2308*$Y. Kobayashi K. Prabhakaran T. Ogino 1995VPThermal Clustering of very thin oxide formed on Si surfaces by N2O/O2 adsorption Surf. Sci. 329 167<6S.D. Kosowsky C.H. Hsu P.S. Pershan J. Bevk B.S. Freer 19952,An X-ray scattering study of SiOx/Si/Ge(001)Appl. Surf. Sci.84 179,&N. Koyama T. Endoh H. Fukuda S. Nomura 1996TNGrowtyh kinetics of ultrathin silicon dioxide films formed by oxidation in N2OJ. Appl. Phys.79 1464 ONO5"O. Kubachevski T. G. Chart 1974J. Chem. Thermodyn.6 467c6/K. Kumar A.I. Chou C. Lin P. Choudhury J.C. Lee 1997BSTM observation of thermal oxide growth on Si(111)7x7 surfaces Phys. Rev. B48 142914.A. Ourmazd D.W. Taylor J.A. Rentscheir J. Bevk 1987Phys. Rev. Lett.53 743A. Pashutski M. Folman 1989<5Low T XPS studues of NO and N2O adsorption on Al(100) Surf. Sci. 216 395*$A. Pasquarello M.S. Hybertsen R. Car 1995VPSi 2p Core-Level Shifts at the Si(001)-SiO2 Interface: A First Principles Study.Phys. Rev. Lett.74 1024*$A. Pasquarello M.S. Hybertsen R. Car 1995VPSi 2p Core-Level Shifts at the Si(001)-SiO2 Interface: A First Principles Study.Phys. Rev. Lett.74 1024*$A. Pasquarello M.S. Hybertsen R. Car 1996 Phys. Rev. B53 10942>8C.H.F. Peden J.W. Rogers N.D. Shinn K.B. Kidd K.L. Tsang 1993 Phys. Rev. B47 15622 ONOJ.P. Pelz R.H. Koch 1991lfSuccessive oxidation stages and annealing behavior of the Si(111)7x7 surface observed with STM and STSJ. Vac. Sci. Tech. B92 775 NewR. Pfeffer M. Ohring 1981<6Network oxygen exchange during water diffusion in SiO2J. Appl. Phys.52 777(!G.J. Pietsch U. Kohler M. Henzler 1993\UAnisotropic etching vs. interaction with atomic steps: STM on HF/NH4F treated Si(111)J. Appl. Phys.7373 4797E.H. Poindexter 1989D>MOS interface states: overview and physicochemical perspectiveSemic. Sci. Tech.4 961"E.H. Poindexter W.L. Warren 1995b[Paramagnetic Point Defects in Amorphous Thin Films of SiO2 and Si3N4: Updates and AdditionsJ. Electrochem. Soc. 142 2508 ONOB;T.A. Rabedeau I.M. Tidswell P.S. Pershan J. Berk B.S. Freer 1991Appl. Phys. Lett.59 3422("S.I. Raider R.A. Gdula J.R. Petrak 19750*Nitrogen reaction at the Si-SiO2 interfaceAppl. Phys. Lett. 27 1501 S.I Raider 1988&The role of SiO in Si oxidation C.R. Helms D.E. Deal;The Physics and Chemistry of SiO2 and the Si-SiO2 Interfaceq @ q!q0 @ q1q NY  Plenum Press35W. Ranke 1993XRUPS and XPS reference data on O,N,NO,(NO2)2,Nh3,H2O,OH,H2S,SH and S on Ge surfaces$J. Electr. Spectr. Rel. Phen.61 231BThe effect of RT N2O on the oxide/Si(100) interface structure.Appl. Phys. Lett.67 2836 ONO4-H.C. Lu E.P. Gusev E. Garfunkel T. Gustafsson 1996roughness paper, SS Surf. Sci. 351 111VOH.C. Lu E.P. Gusev T. Gustafsson E. Garfunkel M.L. Green D. Brasen L.C. FeldmanR 199681High Resolution Studies of Silicon OxynitridationAppl. Phys. Lett.69 2713 ONO6/Z.H. Lu R.J. Hussey M.J. Graham R. Cao S.P. Tay 1996.'Rapid Thermal N2O oxynitride on Si(100) J. Vac. Sci. Technol. Be14 2882 ONO$H.C. Lu  1997 N2MEIS Study Of Silicon Oxidation and Oxynitridation ,Dept. of Physics  & Piscataway  .Rutgers University 4-H.C. Lu E.P. Gusev T. Gustafsson E. Garfunkel1 1997~bThe Effect of Near-Interfacial Nitrogen on the Oxidation Behavior of Ultrathin Silicon OxynitridesJ. Appl. Phys.81 6992 onoHBH.C. Lu E.P. Gusev T. Gustafsson M.L. Green D. Brasen E. Garfunkel 1997\UCompositional and Mechanistic Aspects of Ultratrhin Oxynitride Film Growth on Si(100)"Microelectronic Engineeringm3629 ononRKZ.H. Lu J.P. McCaffrey B. Brar G.D. Wilk R.M. Wallace L.C. Feldman S.P. Tay. 1997HASiO2 film thickness metrology by x-ray photoelectron spectroscopycAppl.Phys.Lett.71 27640*G. Lucovsky J. F. Fitch E. Kobeda E. Irene 1988 C.R. Helms D.E. Deal;The Physics and Chemistry of SiO2 and the Si-SiO2 Interfaceq @ q!q0 @ q1q NY  Plenum Press 139ZTG. Lucovsky T. Yasuda Y. Ma S.V. Hattangady X.L. Xu V. Misra B. Hornung J.J. Wortman 1994`ZControl of Si-SiO2 interface properties in MOS devices prepared by plasma-assisted and RTP ,&S.P. Murarka K. Rose T. Ohmi T. SeidelJDInterface Control of Electrical, Chemical, and Mechanical Properties MRS 318X81 MRS Symposium Proceedings",&G. Lupke D.J. Bottomley H.M. van Driel 1993 Phys. Rev. B47 103890*F. Lutz L. Kubler J.L. Bischoff D. Bolmont 1989sPhotoemission proof for a SiO2 islands growth mode initiated on the step of Si(001) during thermal oxidation by O2.q @ qqq @ qrq Phys. Rev. B.40 11747B< I.J. Malik S. Pirooz L.W. Shive A.J. Davenport C.M. Vitus 1993LFSurface roughness of silicon wafers on different lateral length scalesJ. Electrochem. Soc. 140  L75*$H.Z. Massoud J.D. Plummer E.A. Irene 1985\VThermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin RegimeJ. Electrochem. Soc. 132 2693oxidation mechanism review New*$H.Z. Massoud J.D. Plummer E.A. Irene 1985d^Thermal Oxidation of Silicon in Dry Oxygen:Accurate determination of the Kinetic rate constantJ. Electrochem. Soc. 132 1745oxidation mechanism review New H. Massoud 1995 SiO modelprivate communicationTNT. Matsuoka S. Taguchi H. Ohtsuka K. Taniguchi C. Hamaguchi S. Kakimoto K. Uda 1996 N2O IEEE Trans. Electron. Dev.43 1364 onowF@F.R. McFeely K.Z. Zhang M.M. Banaszak-Hall S. Lee J.E. Bender-IV 1996vpAn Inquiry Concerning the Principles of Si2p Core-level Photoemission Shift Assignments at the Si/SiO2 InterfaceJ. Vac. Sci. Technol. B14 2824*$C.J. McHargue D.L. Joslin C.M. White 1994,&Ion beam mixing on isolator substratesNucl. Instr. Meth. B91 5494-B. Mohadjeri M. R. Baklanov E. Kondoh K. Maex 1998LEOxidation and Roughehing of Silicon During Annealing in a RTP Chamber J. Appl. Phys.837  3614"S.S. Moharir A.N. Chandorkar 1989F@An interface reaction mechanism for the dry oxidation of siliconJ. Appl. Phys.65 2171 G. Molire 1947Z. Naturforsch.2A 133,&P. Morgen U. Hoffer W. Wurth E. Umbach 1989F@Initial Stages of Oxygen adsorption on Si(111): The stable State Phys. Rev. B39 372081M. Morita T. Ohmi E. Hasegawa M. Kawakami K. Suma 1989(!RT oxid., field-assyst. mechanismAppl. Phys. Lett.55 562:3M. Morita T. Ohmi E. Hasegawa M. Kawakami M. Ohwada 1990J. Appl. Phys.68 1272M. Morita T. Ohmi 1994>7Characterization and Control of Native Oxide on SiliconJpn. J. Appl. Phys.33 370.,%layer-by-layer growth of native oxideB&M.M. Moslehi S.C. Shatas K.C. Saraswat  1985 AThin SiO2 Insulators Grown by Rapid Thermal Oxidation of Silicon  @  .Appl. Phys. Lett. 47  1353  N.F. Mott  1987"On the oxidation of silicon Phil. Mag. B55  1170)N.F. Mott S. Rigo F. Rochet A.M. Stoneham 1989Oxidation of silicon Phil. Mag. B.  60  189*#M.P. Murrell C.J. Sofield S. Sugden 1991("Silicon Transport during oxidation Phil. Mag. B63 1277 Phil. Mag. B"isotope oxidation, HF + NRAA. Namiki K. Tanimoto 1989LFXPS study of the early stages of oxidation of Si(100) by atomic oxygen Surf. Sci.:4U. Neuwald H.E. Hessel A. Feltz U. Memmert R.J. Behm 1992? Native oxide by STMAppl. Phys. Lett. 60 1307