About Us

      Atomic-layer engineering in complex-oxide systems is a promising new field in condensed matter physics and materials science. In order to tackle this problem, we are currently building a unique oxide molecular-beam-epitaxy (MBE) system that allows precise control of complex-oxide heterostructures at an atomic scale. 

      Compared with the conventional semiconductor and metal MBE's, complex-oxide MBE has additional technical difficulties. However, our oxide-MBE system has introduced a number of new features that overcome this hurdle effectively. Using this capability, we will create various atomic-scale-engineered oxide materials or “oxide metamaterials”, on which we will investigate strongly-correlated artificial 2D electron gas, artificial high T_c superconductors, magnetism-superconductivity proximity effect, artificial ferroelectrics and multiferroics, ferroelectric/magnetic tunnel junctions, electric/spin field effect, and spin-injection Josephson effect.

      We also use other thin-film growth techniques such as Pulsed Laser Deposition (PLD), Chemical Vapor Deposition (CVD), Ion Beam Assisted Deposition (IBAD) and Sputtering for various thin-film devices.

      In parallel with the oxide metamaterials effort, we investigate materials issues and decoherence mechanism in superconducting quantum computers.

What's new?

      We are looking for enthusiastic students. If you are interested, please contact Prof. Seongshik Oh