Strongly correlated complex-oxide interfaces: From growth to orbital physics

Jak Tchakhalian

Physics department, University of Arkansas, Fayetteville

Utilizing the recent advances in complex oxide synthesis, one can now combine ultra thin layers with often antagonistic physical properties to create new materials in the form of heterostructures with properties different or even not attainable in the bulk¹. Broken symmetries, strain, and modified local environment at the interface provide a unique route to manipulate the subtle energy balance in such artificial correlated materials with promise to create novel material phases and quantum states. Here I will discuss how the interface can be used to alter electronic, magnetic and orbital structure of multilayers composed of late transition metal oxides with specific examples from cuprates and nickelates. The talk illustrate underlying experimental challenges in growth and characterization of unit-cell thin layers of complex oxides and illustrate the ways synchrotron based resonant x-ray spectroscopies/diffraction can be used to probe bulk vs. interface electronic, magnetic and structural properties to gain unique insight into the underlying physics.

(1) J. Chakhalian et al, Science, v. 314, 1114, (2007).