Select Publications

  • Biological control of aragonite formation in stony corals, S. Von Euw, Q. Zhang, V. Manichev, N. Murali, J. Gross, L. C. Feldman, T. Gustafsson, C. Flach, R. Mendelsohn, P. G. Falkowski, Science 356, 933-938 (2017)
  • Mitochondria Protection after Acute Ischemia Prevents Prolonged Upregulation of IL-1β and IL-18 and Arrests CKD, H.H. Szeto, S. Liu, Y. Soong, S. V. Seshan, L. Cohen-Gould, V. Manichev, L. C. Feldman and T. Gustafsson, JASN November 23, 2016
  • Helium ion beam lithography (HIBL) using HafSOx as the resist, F. Lou, V. Manichev, M. Li, G. Mitchson, B. Yakshinskiy, D. Johnson, E. Garfunkel, Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977928

  • Chemically amplified dehydration of thin oxide films, J. T. Anderson,W. Wang, K. Jiang, T. Gustafsson, C. Xu, E.. Garfunkel, and D. A. Keszler, ACS Sustainable Chemistry & Engineering (submitted)
  • Deuterium adsorption from the D2O exposure of the oxidized 4H-SiC (0001), (0001(_)) and (112(_)0) surfaces, G. Liu, C, Xu, B. Yakshinskiy, L. Wielunski, T. Gustafsson, J. Bloch, S. Dhar and L. C. Feldman, to be submitted.
  • Vibrational correlation effects in Medium Energy Ion Scattering from SiC, C. Xu, H. D. Lee, S. Shubeita, G. Liu, L. C. Feldman and T. Gustafsson, to be submitted.
  • Effects and Mechanisms of RIE on SiC Inversion Layer Mobility and its Recovery, G. Liu, Y. Xu, C. Xu, A. Basile, F. Wang, S. Dhar, E. Conrad, P. Mooney, T. Gustafsson, E. Garfunkel, and L. C. Feldman, submitted to Journal of Applied Physics.
  • Helium-ion microscopy analysis of alkali-activated slag cement, A.E. Morandeau, J.P. Fitts, H.D. Lee, S.M. Shubeita, L.C. Feldman, T. Gustafsson, and C.E. White, submitted to Applied Materials & Interfaces
  • Atomic State and Characterization of Phosphorus and Nitrogen at the SiO2/SiC interface, Y. Xu, C. Xu, G. Liu, H. D. Lee, S. M. Shubeita, C. Jiao, A. Modic, A. C. Ahyi, Y. Sharma, A. Wan, J. R. Williams, T. Gustafsson, E. L. Garfunkel, S. Dhar and L. C. Feldman, submitted to Journal of Applied Physics

  • Water absorption in thermally grown oxides on SiC and Si: bulk oxide and interface properties, G. Liu, C. Xu, B. Yakshinskiy, L. Wielunski, T. Gustafsson, J. Bloch, S. Dhar, and L. C. Feldman, Appl. Phys. Lett. 105, 191602 (2014).
  • Atomic state and characterization of nitrogen at the SiC/SiO2 interface, Y. Xu, X. Zhu, H. D. Lee, C. Xu, S. M. Shubeita, A. C. Ahyi, Y. Sharma, J. R. Williams, W. Lu, S. Ceesay, B. R. Tuttle, A. Wan, S. T. Pantelides, T. Gustafsson, E. L. Garfunkel and L. C. Feldman, J. Appl. Phys. 115, 033502 (2014).
  • Gold nanostar substrates for SERS-based chemical sensing in the femtomolar regime, A.S. Indrasekara, S. Myers, S. Shubeita, L.C. Feldman, T. Gustafsson and L. Fabris, Nanoscale 6, 8891 – 8899 (2014)
  • Indium and bismuth interdiffusion and its influence on the mobility in In2Se3/Bi2Se3, H.D. Lee, C. Xu, S.M. Shubeita, M. Brahlek, N. Koirala. S. Oh and T. Gustafsson, Thin Solid Films 556, 322-324 (2014)

  • Dielectric and insulating properties of SrTiO3/Si heterostructure controlled by cation concentration, F. Yang, Z.Z. Yang, W.T Li, F. M. Li, X. T. Zhu, L. Gu, H. D. Lee, S. Shubeita, C. Xu, T. Gustafsson and J. D. Guo, Science China, 56, 2404 – 2409 (2013)
  • Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface, N. Bansal, Y. S. Kim, E. Erdey, Y. Horibe, K. Iidad, M. Tanimura, G. H. Li, T. Feng, H. D. Lee, T. Gustafsson, E. Andrei, and S. Oh, Thin Solid Films 520, 224-229 (2011).
  • Diffusion and interface growth in hafnium oxide and silicate films on Si(001), L.V. Goncharova, M. Dalponte, T. Feng, T. Gustafsson, E. Garfunkel, P.S. Lysaght, and G. Bersuker, Phys. Rev. B 83, 115329 (2011).
  • Instability, Intermixing and Electronic Structure at the Epitaxial LaAlO3/SrTiO3(001) Heterojunction, S.A. Chambers, M.H. Engelhard, V. Shutthanandan, Z. Zhu, T.C. Droubay, L. Qiao, P.V. Sushko, T. Feng, H. D. Lee, T. Gustafsson, E. Garfunkel, A.B. Shah, J.-M. Zuo and Q.M. Ramasse, Surface Science Reports, 65 317–352 (2010).
  • Structure and stoichiometry of (0001) 4H-SiC/oxide interface, X. G. Zhu, H. D. Lee, T. Feng, A. C. Ahyi, D. Mastrogiovanni, A. Wan, E. Garfunkel, J. R. Williams, T. Gustafsson, and L. C. Feldman, Appl. Phys. Lett. 97, 071908 (2010).
  • ALD growth of Al2O3 on GaAs - Oxide Reduction, Interface Structure and CV performance, H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, E. Garfunkel, T. Gustafsson, Phys. Status Solidi C 7, 260– 263 (2010).
  • Reduction of native oxides on GaAs during atomic layer growth of Al2O3, H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, T. Gustafsson, and E. Garfunkel, Appl. Phys. Lett. 94 (2009) 222108.
  • Effect of excess vacancy concentration on As and Sb doping in Si, M. Dalponte, M. C. Adam, H. I. Boudinov, L. V. Goncharova, T. Feng, E. Garfunkel and T. Gustafsson, J. Phys. D – Appl. Phys., 42 (2009) 165106.
  • Medium Energy Ion Scattering for Near Surface Structure and Depth Profiling, T. Gustafsson in ” Ion Beams in Nanoscience and Technology”, R. Hellborg, H. Whitlow, and Y. Zhang, (Eds.), Springer, Berlin, 2010.