Recent Publications
Paper Archive (1987-1995)
Theses
"Topics in Thin Films: Geometric Structure Sensitivity at the Nanoscale in Heterogeneous Catalysts and Oxides of Cerium for Alternative Gate Dielectrics"
Robin Barnes, 2006
"Role of Atomic Transport in Evolution of Nano-scale Oxide Structures"
Dmitri Starodoub, 2003
"Metal and Alloy Surface Structure Studies Using Medium-Energy Ion Scattering"
Brett Busch, 2000
"The Growth Mechanisms of Ultrathin Gate Dielectrics on Silicon"
Hsu-Chang Lu, 1997
Instumentation
Nonperturbative treatment of medium-energy proton scattering under shadowing-blocking conditions in Al(110)
P. L. Grande, A. Hentz, G. Schiwietz, W. H. Schulte,B. W. Busch, D. Starodub, and T. Gustafsson
PRB 69 (2004) 104112.
Limitations to depth resolution in ion scattreing experiments
Schulte W.H., Busch B.W., Garfunkel E., Gustafsson T., Schiwietz G., Grande P.L.
Nucl. Instrum. Meth. B 183 (2001) 16.
Layer-resolved depth profiling at single crystal surfaces
Busch B.W., Schulte W.H., Gustafsson T., Uebing C.
Nucl. Instrum. Meth. B 183 (2001) 88.
High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering
Gustafsson T., Lu H.C., Busch B.W., Schulte W.H., Garfunkel E.
Nucl. Instrum. Meth. B 183 (2001) 146.
Metal and Alloy Surface Structure
Observation of collective inner-shell effects for protons backscattered from the Al(110) surface
Grande P.L., Hentz A., Schiwietz G., Starodub D., Garfunkel E., GustafssonT.
Phys. Rev. A 72(2005)12902
The reaction of O2 with Al(110): a medium energy ion scattering study of nano-scale oxidation
Starodub D., Gustafsson T., Garfunkel E.,
Surf. Sci. 552(2004) 119.
Rocksalt CrC formation on the Fe-15% Cr(100) surface
Busch B.W., Uebing C., Gustafsson T.
Phys.Rev.B 64 (2001) 115427.
Medium-energy ion scattering study of arsenic and sulfur segregation to the Fe?% W(100) surface
Busch B.W., Gustafsson T., Viefhaus H., Uebing C.
Surf. Sci. 463 (2000) 145.
Thermal expansion and mean-square displacements of the Al(110) surface studied with medium-energy ion scattering
Busch B.W. and Gustafsson T.
PRB 61 (2000) 16097.
Competition of arsenic and sulfur segregation on Fe-9%W(100) single crystal surfaces
Busch B.W., Gustafsson T., Uebing C.
APL 74 (1999) 3564.
Oscillatory relaxation of Al(110) reinvestigated by using medium-energy ion scattering
Busch B.W., Gustafsson T.
Surf. Sci. 415 (1998) L1074.
Temperature dependent structure of clean Ag(110) studied by medium energy ion scattering
Busch B.W., Gustafsson T.
Surf. Sci. 407 (1998) 7.
Medium-energy ion-scattering study of the temperature dependence of the structure of Cu(111)
Chae K.H., Lu H.C., Gustafsson T.
PRB 54 (1996) 14082.
Temperature Dependent Sign Reversal of the Surface Contraction of Ag(111)
Statiris P., Lu H.C., Gustafsson T.
PRL 72 (1994) 3574.
Growth and Characterization of Ultrathin High-K Dielectrics
Reduction of native oxides on GaAs during atomic layer growth of Al2O3
Lee H.D., Feng T., Mastrogiovanni D., Wan A., Gustafsson T., and Garfunkel E.
APL 94 (2009) 222108.
Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks
Goncharova L., Dalponte M., Gustafsson T., Celik O., Garfunkel E., Lysaght P.S., Bersuker G.
J.Vac.Sci.Technol. A 25(2) (2007) 261.
Oxygen diffusion and reactions in Hf-based dielectrics
Goncharova L., Dalponte M., Starodub, D.G., Gustafsson T., Garfunkel E., Lysaght P.S., Foran B., Bersuker G.
APL 89 (2006) 044108.
A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100)
Barnes R., Starodub D. Gustafsson T., Garfunkel E.
J.Appl. Phys 100 (2006) 044103.
Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si (001)
Goncharova L., Starodub D., Garfunkel E., Goncharova L., Gustafsson T., Vaithyanathan V., Lettier, J.,Scholm, D.G.
J.Appl.Phys 100 (2006) 014912
Structure,Composition and Order at Interfaces of Crystalline Oxide and other High_K Materials on Silicon
Gustafsson T., Garfunkel E., Goncharova L., Starodub D., Barnes R., Dalponte M., Bersuker G., Foran B., Lysaght P., Schlom D.G., Vaithyanathan V., Hong M., Kwo R.
NATO Science Series II. Mathematics,Physics and Chemistry vol.220: Defects in High-K Gate Dielectric Stacks (2006)349
High-quality nanothickness single-crystal Sc2O3 film grown on Si(111)
Kuo J., Chu M.-W., Chen C.H., Goncharova L.V., Garfunkel E., Gustafsson T.,
APL87(2005) 251902.
Atomic layer deposition of hafnium oxide on germanium substrates
Delabie A., Puurunen R.L., Brijs B., Caymax M., Conard T., Onsia B., Richard O., Vandervorst W., Chao Zhao, Heyns M.M., Meuris M., Viitanen M.M., Brongersma H.H., de Ridder M., Goncharova L.V., Garfunkel E., Gustafsson T., Tsai W.
J.Appl.Phys. 97(2005) 64104.
Thermal decomposition behavior of the HfO2//SiO2//Si system
Sayan S., Garfunkel E., Nishimura T., Schulte W.H., Gustafsson T., Wilk G.D.;J. Appl. Phys. 94 (2003) 928.
Advances in high kappa gate dielectrics for Si and III-V semiconductors
Kwo R., Hong M., Busch B., Muller D.A., Chabal Y.J., Kortan A.R., Mannaerts J.P., Yang B., Ye P., Gossmann H., Sergent A.M., Ng K.K., Bude J., Schulte W.H., Garfunkel E., Gustafsson T.
J. Crystal Growth 251 (2003) 645.
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Tsai W., Carter R.J., Nohira H., Caymax M., Conard T., Cosnier W., DeGendt S., Heyns M., Petry J., Richard O., Vandervorst W., Young E., Zhao C., Maes J., Tuominen M., Schulte W.H., Garfunkel E., Gustafsson T.
Microelectron. Eng. 65 (2003) 259.
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
Ho M.Y., Gong H., Wilk G.D., Busch B.W., Green M.L., Lin W.H., See A., Lahiri S.K., Loomans M.E., Raisanen P.I., Gustafsson T.
J. Crystal Growth 251 (2003) 645.
Chemical vapor deposition of HfO2 films on Si(100)
Sayan S., Aravamudhan S., Busch B.W., Schulte W.H., Cosandey F., Wilk G.D., Gustafsson T., Garfunkel E.
J.Vac.Sci.Technol. A 20(2) (2002) 507.
Interface reactions of high-kappa Y2O3 gate oxides with Si
Busch B.W., Kwo R., Hong M., Mannaerts J.P., Sapjeta B.J., Schulte W.H., Garfunkel E., Gustafsson T.
APL 79 (2001) 2447.
High temperature stability in lanthanum and zirconia-based gate dielectrics
Maria J.P., Wicaksana D., Kingon A.I., Busch B., Schulte W.H., Garfunkel E., Gustafsson T.
JAP 90 (2001) 3476.
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Chambers J.J., Busch B.W., Schulte W.H., Gustafsson T., Garfunkel E., Wang S., Maher D.M., Klein T.M., Parsons G.N.
Appl. Surf.Sci. 181 (2001) 78.
Oxygen exchange and transport in thin zirconia films on Si(100)
Busch B.W., Schulte W.H., Garfunkel E., Gustafsson T., Qi W., Nieh R., Lee J.
Phys. Rev. B 62 (2000) R13290.
Structural Properties of Thin Films of High Dielectric Constant Materials on Si(100)
Lu H.C., Yasuda N., Garfunkel E., Gustafsson T., Chang G.P., Opila R.L., Alers G.
Microelec. Eng. 48 (1999) 287.
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
Alers G.B., Werder D.J., Chabal Y., Lu H.C., Gusev E.P., Garfunkel E., Gustafsson T., Urdahl R.S.
APL 73 (1998) 1517.
Growth and Characterization of Ultrathin Silicon Oxynitride Films
Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(1120) 4H-SiC interface
Dhar S., Song Y.W., Feldman L.C., Isaacs-Smith T., Tin C.C., Williams J.R., Chung G., Nishimura T., Starodub D., Gustafsson T., Garfunkel E.,
Appl.Phys.Lett. 84 (2004) 1098.
The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon
H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel and T. Gustafsson
Appl.Surf.Sci. 166 (2000) 465.
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
Chang J.P., Green M.L., Donnelly V.M., Opila R.L., Eng J.,Jr., Sapjeta J., Silverman P.J., Weir B., Lu H.C., Gustafsson T., Garfunkel E.
J.Appl.Phys. 87 (2000) 4449.
Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
Lu H.C., Gusev E.P., Garfunkel E., Busch B.W., Gustafsson T., Sorsch T.W., Green M.L.
J.Appl.Phys. 87 (2000) 1550.
Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process
Gusev E.P., Lu H.C., Garfunkel E.,Gustafsson T., Green M.L., Brasen D., Lennard W.N.
J.Appl.Phys. 84 (1998) 2980.
The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide
Gusev E.P., Lu H.C., Gustafsson T., Garfunkel E., Green M.L., Brasen D.
J.Appl.Phys. 82 (1997) 896.
Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides
Lu H.C., Gusev E.P., Gustafsson T., Garfunkel E.
J.Appl.Phys. 81 (1997) 6992.
Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T = 760-1050 °C
Green M.L., Sorsch T., Feldman L.C., Lennard W.N., Gusev E.P., Garfunkel E., Gustafsson T., Lu H.C.
Appl.Phys.Lett. 71 (1997) 2978.
High resolution ion scattering study of silicon oxynitridation
Lu H.C., Gusev E.P., Gustafsson T., Garfunkel E., Green M.L., Brasen D., Feldman L.C.
Appl.Phys.Lett. 69 (1996) 2713.
Silicon Oxidation
MEIS study of As implantation in O or N pre-implanted Si(001)
Dalponte M., Boudinov H., Goncharova L.V., Garfunkel E., Gustafsson T.,
Nucl. Instrum. Meth. B 249 (2006) 876.
Thermal activation of As implanted in bulk Si and separation by implanted oxygen
Dalponte M., Boudinov H., Goncharova L.V., Starodub D., Garfunkel E., Gustafsson T.,
J.Appl.Phys. 96(2004) 7388.
An isotopic labeling study of the growth of thin oxide films on Si(100)
H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel and T. Gustafsson
Appl.Phys.Lett. 67 (1995) 1742.
Silicon oxide decomposition and desorption during the thermal oxidation of silicon
Starodub D., Gusev E.P., Garfunkel E., Gustafsson T.
Surf.Rev.Lett. 6 (1999) 45.
An isotopic labeling study of the growth of thin oxide films on Si(100)
H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel and T. Gustafsson
Appl.Phys.Lett. 67 (1995) 1742.
Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering
E. P. Gusev, H. C. Lu, E. Garfunkel and T. Gustafsson
PRB. 52 (1995) 1759.
Thursday, October 2, 2008