Recent Publications

  Paper Archive (1987-1995)


  Theses


 "Topics in Thin Films: Geometric Structure Sensitivity at the Nanoscale in Heterogeneous Catalysts and Oxides of Cerium for Alternative Gate Dielectrics"
 Robin Barnes, 2006

 "Role of Atomic Transport in Evolution of Nano-scale Oxide Structures"
 Dmitri Starodoub, 2003

 "Metal and Alloy Surface Structure Studies Using Medium-Energy Ion Scattering"
 Brett Busch, 2000

 "The Growth Mechanisms of Ultrathin Gate Dielectrics on Silicon"
 Hsu-Chang Lu, 1997


  Instumentation

 Nonperturbative treatment of medium-energy proton scattering under shadowing-blocking conditions in Al(110)
 P. L. Grande, A. Hentz, G. Schiwietz, W. H. Schulte,B. W. Busch, D. Starodub, and T. Gustafsson
 PRB 69 (2004) 104112.

 Limitations to depth resolution in ion scattreing experiments
 Schulte W.H., Busch B.W., Garfunkel E., Gustafsson T., Schiwietz G., Grande P.L.
 Nucl. Instrum. Meth. B 183 (2001) 16.

 Layer-resolved depth profiling at single crystal surfaces
 Busch B.W., Schulte W.H., Gustafsson T., Uebing C.
 Nucl. Instrum. Meth. B 183 (2001) 88.

 High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering
 Gustafsson T., Lu H.C., Busch B.W., Schulte W.H., Garfunkel E.
 Nucl. Instrum. Meth. B 183 (2001) 146.


  Metal and Alloy Surface Structure

 Observation of collective inner-shell effects for protons backscattered from the Al(110) surface
  Grande P.L., Hentz A., Schiwietz G., Starodub D., Garfunkel E., GustafssonT.
  Phys. Rev. A 72(2005)12902

 The reaction of O2 with Al(110): a medium energy ion scattering study of nano-scale oxidation
  Starodub D., Gustafsson T., Garfunkel E.,
  Surf. Sci. 552(2004) 119.

 Rocksalt CrC formation on the Fe-15% Cr(100) surface
  Busch B.W., Uebing C., Gustafsson T.
  Phys.Rev.B 64 (2001) 115427.

 Medium-energy ion scattering study of arsenic and sulfur segregation to the Fe?% W(100) surface
  Busch B.W., Gustafsson T., Viefhaus H., Uebing C.
  Surf. Sci. 463 (2000) 145.

 Thermal expansion and mean-square displacements of the Al(110) surface studied with medium-energy ion scattering
  Busch B.W. and Gustafsson T.
  PRB 61 (2000) 16097.

 Competition of arsenic and sulfur segregation on Fe-9%W(100) single crystal surfaces
  Busch B.W., Gustafsson T., Uebing C.
  APL 74 (1999) 3564.

 Oscillatory relaxation of Al(110) reinvestigated by using medium-energy ion scattering
  Busch B.W., Gustafsson T.
  Surf. Sci. 415 (1998) L1074.

 Temperature dependent structure of clean Ag(110) studied by medium energy ion scattering
  Busch B.W., Gustafsson T.
  Surf. Sci. 407 (1998) 7.

 Medium-energy ion-scattering study of the temperature dependence of the structure of Cu(111)
  Chae K.H., Lu H.C., Gustafsson T.
  PRB 54 (1996) 14082.

 Temperature Dependent Sign Reversal of the Surface Contraction of Ag(111)
  Statiris P., Lu H.C., Gustafsson T.
  PRL 72 (1994) 3574.


  Growth and Characterization of Ultrathin High-K Dielectrics

 Reduction of native oxides on GaAs during atomic layer growth of Al2O3
 Lee H.D., Feng T., Mastrogiovanni D., Wan A., Gustafsson T., and Garfunkel E.
 APL 94 (2009) 222108.

 Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks
 Goncharova L., Dalponte M., Gustafsson T., Celik O., Garfunkel E., Lysaght P.S., Bersuker G.
 J.Vac.Sci.Technol. A 25(2) (2007) 261.

 Oxygen diffusion and reactions in Hf-based dielectrics
 Goncharova L., Dalponte M., Starodub, D.G., Gustafsson T., Garfunkel E., Lysaght P.S., Foran B., Bersuker G.
 APL 89 (2006) 044108.

 A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100)
 Barnes R., Starodub D. Gustafsson T., Garfunkel E.
 J.Appl. Phys 100 (2006) 044103.

 Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si (001)
 Goncharova L., Starodub D., Garfunkel E., Goncharova L., Gustafsson T., Vaithyanathan V., Lettier, J.,Scholm, D.G.
  J.Appl.Phys 100 (2006) 014912

 Structure,Composition and Order at Interfaces of Crystalline Oxide and other High_K Materials on Silicon
 Gustafsson T., Garfunkel E., Goncharova L., Starodub D., Barnes R., Dalponte M., Bersuker G., Foran B., Lysaght P., Schlom D.G., Vaithyanathan V., Hong M., Kwo R.
 NATO Science Series II. Mathematics,Physics and Chemistry vol.220: Defects in High-K Gate Dielectric Stacks (2006)349

 High-quality nanothickness single-crystal Sc2O3 film grown on Si(111)
 Kuo J., Chu M.-W., Chen C.H., Goncharova L.V., Garfunkel E., Gustafsson T.,
  APL87(2005) 251902.

 Atomic layer deposition of hafnium oxide on germanium substrates
 Delabie A., Puurunen R.L., Brijs B., Caymax M., Conard T., Onsia B., Richard O., Vandervorst W., Chao Zhao, Heyns M.M., Meuris M., Viitanen M.M., Brongersma H.H., de Ridder M., Goncharova L.V., Garfunkel E., Gustafsson T., Tsai W.
 J.Appl.Phys. 97(2005) 64104.

 Thermal decomposition behavior of the HfO2//SiO2//Si system
 Sayan S., Garfunkel E., Nishimura T., Schulte W.H., Gustafsson T., Wilk G.D.;J. Appl. Phys. 94 (2003) 928.

 Advances in high kappa gate dielectrics for Si and III-V semiconductors
 Kwo R., Hong M., Busch B., Muller D.A., Chabal Y.J., Kortan A.R., Mannaerts J.P., Yang B., Ye P., Gossmann H., Sergent A.M., Ng K.K., Bude J., Schulte W.H., Garfunkel E., Gustafsson T.
 J. Crystal Growth 251 (2003) 645.

 Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
 Tsai W., Carter R.J., Nohira H., Caymax M., Conard T., Cosnier W., DeGendt S., Heyns M., Petry J., Richard O., Vandervorst W., Young E., Zhao C., Maes J., Tuominen M., Schulte W.H., Garfunkel E., Gustafsson T.
 Microelectron. Eng. 65 (2003) 259.

 Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
 Ho M.Y., Gong H., Wilk G.D., Busch B.W., Green M.L., Lin W.H., See A., Lahiri S.K., Loomans M.E., Raisanen P.I., Gustafsson T.
 J. Crystal Growth 251 (2003) 645.

 Chemical vapor deposition of HfO2 films on Si(100)
 Sayan S., Aravamudhan S., Busch B.W., Schulte W.H., Cosandey F., Wilk G.D., Gustafsson T., Garfunkel E.
  J.Vac.Sci.Technol. A 20(2) (2002) 507.

 Interface reactions of high-kappa Y2O3 gate oxides with Si
  Busch B.W., Kwo R., Hong M., Mannaerts J.P., Sapjeta B.J., Schulte W.H., Garfunkel E., Gustafsson T.
  APL 79 (2001) 2447.

 High temperature stability in lanthanum and zirconia-based gate dielectrics
  Maria J.P., Wicaksana D., Kingon A.I., Busch B., Schulte W.H., Garfunkel E., Gustafsson T.
  JAP 90 (2001) 3476.

 Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
  Chambers J.J., Busch B.W., Schulte W.H., Gustafsson T., Garfunkel E., Wang S., Maher D.M., Klein T.M., Parsons G.N.
  Appl. Surf.Sci. 181 (2001) 78.

 Oxygen exchange and transport in thin zirconia films on Si(100)
  Busch B.W., Schulte W.H., Garfunkel E., Gustafsson T., Qi W., Nieh R., Lee J.
  Phys. Rev. B 62 (2000) R13290.

 Structural Properties of Thin Films of High Dielectric Constant Materials on Si(100)
  Lu H.C., Yasuda N., Garfunkel E., Gustafsson T., Chang G.P., Opila R.L., Alers G.
  Microelec. Eng. 48 (1999) 287.

 Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
  Alers G.B., Werder D.J., Chabal Y., Lu H.C., Gusev E.P., Garfunkel E., Gustafsson T., Urdahl R.S.
  APL 73 (1998) 1517.


  Growth and Characterization of Ultrathin Silicon Oxynitride Films

 Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(1120) 4H-SiC interface
 Dhar S., Song Y.W., Feldman L.C., Isaacs-Smith T., Tin C.C., Williams J.R., Chung G., Nishimura T., Starodub D., Gustafsson T., Garfunkel E.,
 Appl.Phys.Lett. 84 (2004) 1098.

 The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon
 H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel and T. Gustafsson
 Appl.Surf.Sci. 166 (2000) 465.

 Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
  Chang J.P., Green M.L., Donnelly V.M., Opila R.L., Eng J.,Jr., Sapjeta J., Silverman P.J., Weir B., Lu H.C., Gustafsson T., Garfunkel E.
 J.Appl.Phys. 87 (2000) 4449.

 Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
  Lu H.C., Gusev E.P., Garfunkel E., Busch B.W., Gustafsson T., Sorsch T.W., Green M.L.
  J.Appl.Phys. 87 (2000) 1550.

 Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process
  Gusev E.P., Lu H.C., Garfunkel E.,Gustafsson T., Green M.L., Brasen D., Lennard W.N.
  J.Appl.Phys. 84 (1998) 2980.

 The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide
  Gusev E.P., Lu H.C., Gustafsson T., Garfunkel E., Green M.L., Brasen D.
  J.Appl.Phys. 82 (1997) 896.

 Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides
  Lu H.C., Gusev E.P., Gustafsson T., Garfunkel E.
  J.Appl.Phys. 81 (1997) 6992.

 Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T = 760-1050 C
  Green M.L., Sorsch T., Feldman L.C., Lennard W.N., Gusev E.P., Garfunkel E., Gustafsson T., Lu H.C.
 Appl.Phys.Lett. 71 (1997) 2978.

 High resolution ion scattering study of silicon oxynitridation
  Lu H.C., Gusev E.P., Gustafsson T., Garfunkel E., Green M.L., Brasen D., Feldman L.C.
  Appl.Phys.Lett. 69 (1996) 2713.


  Silicon Oxidation

 MEIS study of As implantation in O or N pre-implanted Si(001)
 Dalponte M., Boudinov H., Goncharova L.V., Garfunkel E., Gustafsson T.,
  Nucl. Instrum. Meth. B 249 (2006) 876.

 Thermal activation of As implanted in bulk Si and separation by implanted oxygen
 Dalponte M., Boudinov H., Goncharova L.V., Starodub D., Garfunkel E., Gustafsson T.,
  J.Appl.Phys. 96(2004) 7388.

 An isotopic labeling study of the growth of thin oxide films on Si(100)
 H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel and T. Gustafsson
  Appl.Phys.Lett. 67 (1995) 1742.

 Silicon oxide decomposition and desorption during the thermal oxidation of silicon
  Starodub D., Gusev E.P., Garfunkel E., Gustafsson T.
  Surf.Rev.Lett. 6 (1999) 45.

 An isotopic labeling study of the growth of thin oxide films on Si(100)
 H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel and T. Gustafsson
  Appl.Phys.Lett. 67 (1995) 1742.

 Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering
 E. P. Gusev, H. C. Lu, E. Garfunkel and T. Gustafsson
  PRB. 52 (1995) 1759.



Thursday, October 2, 2008