Reactions
at Semiconductor Surfaces: From Organic
Monolayers to Selective Atomic Layer Deposition
Stacey F. Bent
Department of Chemical
Engineering
Stanford
University
Stanford,
California 94305
Semiconductor
surfaces present an intriguing and technologically important template for
chemical reactions. We have explored the reactivity of a variety of organic
functional groups at both silicon and germanium surfaces. One goal is to obtain
a sufficiently high degree of surface control and range of attachment
configurations to ultimately enable the precise engineering of interfacial
properties. These interfacial properties
can then be used to control the generation of three dimensional structures at
the micron- to the nanoscale. An example will be presented of multiple-layer
deposition of an organic film directly on Ge(100)-2x1 using alternating
precursor delivery in vacuum. We will
also present results on the use of organic modification to control deposition
of inorganic films through the process of atomic layer deposition (ALD). By using specific organic groups to inhibit
ALD, area-selective deposition on a templated surface can be achieved.