H.M.
Ng Bell
Laboratories, Lucent Technologies,
Murray
Hill, NJ07974, USA
I
will present an overview of GaN research involving intersubband transitions,
growth of non-polar GaN, periodically-poled GaN and formation of nanotip GaN
pyramids. In the first part of my talk, I will discuss results in the area of
plasma-assisted molecular beam epitaxy (MBE) growth and characterization of
GaN/AlGaN superlattices for near-infrared intersubband transitions,
particularly aiming at the telecommunications wavelength of l ~ 1.55 mm. These intersubband transitions in GaN are
inherently fast processes with lifetimes in the range of a few hundred
femtoseconds.
Secondly,
growth of non-polar GaN/AlN on R-plane sapphire substrates will also be
described. Particularly for interband transitions, non-polar quantum wells do
not have a built-in electrostatic field which can red-shift the emission
wavelength as well as decrease the emission efficiency in wider wells. Finally
more exploratory research involving using GaN for frequency conversion as well
as electron field emission will be presented.
Biography:
Dr.
Hock Ng has been a member of technical staff in the Semiconductor Physics
Research Department of Bell Laboratories, Lucent Technologies since 2000. Prior
to that, he was a postdoctoral member of technical staff in the Semiconductor
Research Laboratory of Bell Laboratories, Lucent Technologies from August 1999
to April 2000. He received the B.S., M.S. and Ph.D. degrees in Electrical
Engineering from BostonUniversity in 1994, 1997, and 2000, respectively. His
research interests are in the field of III-Nitrides semiconductor materials and
devices, with a focus on growth by Molecular Beam Epitaxy.
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