Technical Sessions:
Introduction: Ultrathin dielectrics in Si-based microelectronics.
Session 1. Recent advances in experimental studies of SiO2/Si.
Session 2. Theory of the SiO2/Si system.
Session 3. Growth mechanism, processing, and analysis of oxynitridation.
Session 4. Novel features of ultrathin dielectrics.
Session 5. Surface preparation, initial oxidation, and surface science issues.
Poster Session
Session 6. Ultrathin dielectrics characterization methods.
Session 7. Electrical properties and microscopic models of defects.
Session 8. H/D issues and devices reliability.
Session 9. New substrates (SiC, SiGe) and technologies (SOI, etc.)
Session 10. Panel discussion.