Evening (7 pm): registration and informal welcome reception in the SEC (bar)
Introduction:
9:00 am Opening remarks
9:15 L. Feldman, Vanderbilt Univ., USA
Ultrathin dielectrics in Si-microelectronics - history and future.
Session 1: Recent advances in experimental studies of SiO2/Si.
10:00 J.-J. Ganem, L.G. Gosset, S. Rigo and I. Trimaille, Groupe
de Physique des Solides, Universités Paris 6 et Paris 7, France,
and I.J.R. Baumvol and F. C. Stedile, Instituto de Fisica and Quimica -UFRGS,
Porto Alegre, Brazil
Isotopic labeling NRA studies of the initial oxidation and oxynitridation
of Si.
10:40 -11:00 Break
11:00 T. Gustafsson, E.P. Gusev, H.C. Lu, E. Garfunkel Rutgers Univ.,
USA
MEIS studies of ultrathin oxides and oxynitrides.
11:40 R. McFeely, IBM, USA
On the principles of core-level photoemission for the study of SiO2/Si.
12:20 A. Szekeres, Bulgarian Acad. of Sci., Bulgaria
Stress in the SiO2/Si structures formed by thermal oxidation.
12:50 - 2:00 - Lunch
Session 2: - Theory of the SiO2/Si and SiOxNy/Si systems.
2:00 M. Stoneham, Univ. College London, UK, and Carl Sofield,
AEA Technology, Harwell Laboratory, UK
Modeling the Oxide and the Oxidation Process: Can silicon oxidation
be solved?.
2:40 A. Pasquarello, IRRMA and Univ. of Geneva, Switzerland
Nitrogen Incorporation at Si(001)-SiO2 Interfaces: Relation between
N 1s Core-Level Shifts and Microscopic Structure.
3: 20 H. Massoud, Duke Univ., USA
A simple model of the chemical nature of bonds at the SiO2/Si- interface
and its influence on the electronic properties of MOS devices.
3:50 - 4:10 Break
4:10 G. Cerofolini, SGS Thomson, Italy
Chemical perspectives on growth and properties of ultrathin SiO2 layers.
4:50 A. Popov, Moscow Engineering. Physics Inst., Russia
On the influence of defect relaxation in semiconductor on the electronic
structure in the forbidden gap.
Evening - Reception in the FIC; dinner (?);
bus/walk trip (?)
Session 3: Growth mechanism, processing, and analysis of (oxy)nitridation.
9:00 G. Lucovsky, NCSU, USA
Spatially-selective incorporation of bonded-nitrogen into ultrathin
gate dielectrics by low-temperature plasma-assisted processing.
9:40 M. Green, Bell Labs Lucent Technology, USA
Thermal routes to ultrathin oxynitrides.
10:20 A. Mattheus, A. Gschwandtner, G. Innertsberger, A. Grassl, A.
Talg, Univ. of Munich, and Siemens, Germany
Endurance of EEPROM-cells using ultrathin NO- and NH3 nitrided tunnel
oxides
10:50 - 11:00 Break
11:00 H.B. Harrison, H. Li, S.Dimitrijev and P.Tanner,
Griffith Univ., Australia
Nitrogen in ultrathin silicon dielectrics.
11:40 V. Gritsenko, Inst. Semicond. Physics, Russia
Short Order, Electronic Structure and Defects in Silicon Nitride and
Oxinitride.
12:10 T.D.M. Salgado, I.J.R. Baumvol, F.C. Stedile, C. Radtke, C. Krug,
Instituto de Química and Física - UFRGS, Porto Alegre, Brasil
The effects of surface deposition of nitrogen on the oxidation of silicon.
12:40 - 13:30 Lunch
13:30 (- until closed) - excursion to the Hermitage
Dinner.
Session 4: Evening poster session and social
8:00 -9:00 Breakfast
Session 5: Initial oxidation and surface science issues.
9:00 T. Hattori, Musashi Inst. of Technology., Japan
Surface, interface and valence band of ultrathin silicon oxide.
9:40 P. Soukiassian, Univ. Paris-Sud/Orsay., France
Ultrathin oxides on silicon and silicon carbide: from the atomic scale
to interface formation.
10:20 A. Shklyaev, JRCAT, Japan, and Inst. Semicond. Phys., Russia
Interaction of N2O and O2 with Si at the early stage of oxide formation.
10:50 - 11:10 Break
11:10 - H. Neddermeyer, M.-Luther-Univ. Halle-Witten., Germany
Scanning tunneling microscopy on oxide and oxynitride formation, growth
and etching of Si surfaces.
11:50 Z.-H. Lu, IMS/NRC, Canada
Synchrotron and conventional photoemission studies of oxides and N2O
oxynitrides.
12:20 E.P. Gusev, Depts. of Chemistry and Physics, Laboratory for Surface
Modification, Rutgers University, Piscataway, NJ, USA, K. Morino, S. Yokoyama,
M. Hirose, Research Center for Nanodevices and Systems, Hiroshima University,
Higashi-Hiroshima, Japan, and M.L. Green, Lucent Technologies Bell Laboratories,
Murray Hill, NJ , USA
High resolution XPS study of ultrathin NO - oxynitrides
12:40 V. Torres, Univ. Aveiro, Portugal
Early stages of silicon oxidation.
1:00 - 2:00 Lunch
Session 6: Electrical properties and microscopic models of defects.
2:00 M. Hirose, Y.Mizubayashi, K. Morino, M. Fukuda and S. Miyazaki,
Hiroshima Univ., Japan
Tunneling transport and reliability evaluation in extremely thin gate
oxides.
2:40 A. Stesmans, Univ. Leuven, Belgium
New information on the Pb1 interface defect in standard (100)Si/SiO2
from electron spin resonance.
3:20 - 3:40 Break
3:40 L. Meda, EniChem, Milano, Italy, and G.F. Cerofolini, SGS
Thomson, Milano, Italy
Local tunnel emission assisted by inclusions contained into buried
oxides.
4:10 A. Evtukh, Inst. of Microelectronics, Ukraine
Parameters of ultrathin dielectric films under high electric fields.
4:40 C. Tsamis and D. Tsoukalas, Inst. of Microelectronics, Greece
Point defect generation during Si oxidation and oxynitridation.
5:10 - 6:00 Poster Session (cont.), Review and Discussions
6:00 - 7:00 Dinner
Evening - boat trip through town
8:00 - 9:00 - Breakfast
Full day excursion to Petergoph/Pavlovsk for spouses.
Session 7: Novel characterization and features in ultrathin dielectrics.
9:00 J.J.M. de Nijs, DIMES - TU Delft, the Netherlands
Characterization of MOS systems using positrons: present status and
prospects.
9:40 A. Vul', Ioffe Phys.-Techn. Inst., St.Petersburg, Russia
Photoelectric properties of MIS structures.
10:10 H. Przewlocki, Inst. of Electr. Technology., Poland
A new model of photoelectric phenomena in MOS structures: an outline
and applications.
10:40 - 11:10 - Break
11:10 G. Luepke, Vanderbilt Univ., USA
Nonlinear optical spectroscopy of SiO2/Si interfaces.
11:50 V. Litovchenko, Inst. of Semic. Physics, Ukraine
Structural transformations in ultrathin SiO2
12:20 T. Makarova, Ioffe Phys.-Tech. Inst., Russia
Ellipsometric diagnostic of ultrathin nitride and oxide layers on Si.
12:50 - 2:00 Lunch
Session 8: New substrates (SiC, SiGe) and technologies (SOI, etc.).
2:00 J. Stoemenos, Aristotle Univ. of Thessaloniki, Greece
The current status and future trends of SIMOX/SOI, new technological
applications of the SiC/SOI system.
2:40 V. Chelnokov/A. Lebedev, Ioffe Phys.-Tech. Inst., Russia
Current status and future trends in SiC-based devices.
3:20 - 3:40 Break
3:40 V. Craciun* and I. W. Boyd, Electronic and Electrical Engineering, University College London, London, UK; * National Institute for Laser, Plasma and Radiation Physics, Bucharest, Romania, Challenges in the oxidation of strained SiGe layers.
4:10 A. Efremov, Inst. of Semicond. Physics, Ukraine
Computer modeling of ultrathin oxide formation under oxygen implantation.
4:40 - N. Tolk, Vanderbilt Univ., USA
Free-electron laser wavelength-selective materials alteration
and photoexcitation spectroscopy.
5:15 - 6:00 Poster Session (cont.), Review and Discussions
Evening: Conference Banquet
8:00 - 9:00 Breakfast
9:00 E. Poindexter, Army Research Lab., USA
Hydrogenous species and charge defects in the SiO2/Si system.
9:40 F.H.P.M. Habraken and W.M. Arnoldbik, University of Utrecht,
The Netherlands
and A.E.T. Kuiper, Philips Research Laboratories. Eindhoven, The Netherlands
The role of hydrogen in the formation, reactivity and stability of
silicon (oxy)nitride films.
10:20 J. Stathis, IBM, USA
Electrical defects at the SiO2/Si interfaces studied by EPR: The role
of atomic hygrogen.
11:00 I.J.R. Baumvol, F.C. Stedile, C. Radtke, Instituto de Física
and Instituto de Quimica - UFRGS, Porto Alegre - Brasil, F. L. Freire Jr.,
Dept. de Física, PUC-Rio, Rio de Janeiro, Brasil, E.P. Gusev, Depts.
of Chemistry and Physics, and laboratotu for Durface Modification, Rutgers
University, Piscataway, NJ, USA, and M. L. Green, and D. Brasen, Bell Laboratories
Lucent Technologies, Murray Hill, NJ, USA
Deuterium in ultrathin films of SiO2 on Si.
11:30 - 11:45 Break
11:45 - 12:45 Panel review and final discussion (E. Garfunkel)
afternoon - excursion