Preliminary list of participants
(confirmed as of 7/22/97)
-
Israel Baumvol, Instituto de Fisica - UFRGS,
Brazil; and Univ. Paris, France
-
Gianfranco Cerofolini, SGS Thomson Microelectronics,
Italy
-
Valentin Chelnokov/Alexander Lebedev, Ioffe
Physico-Technical Institute, Russia
-
Valentin Craciun, Institute of Physics and
Technology, Romania
-
Alexey Efremov, Institute of Semiconductor
Physics, Ukraine
-
Vladimir Emelianov, Scientific Instruments
Research Institute, Russia
-
Anatoli Evtukh, Research Institute of Microelectronics,
Ukraine
-
Leonard Feldman, Vanderbilt University, USA
-
Eric Garfunkel, Rutgers University, USA
-
Martin Green, Lucent
Technologies Bell Laboratories, USA
-
Vladimir Gritsenko, Institute of Semiconductor
Physics, Novosibirsk, Russia
-
Evgeni Gusev, Rutgers University, USA
and Institute of Applied Information Technologies, Russia
-
Torgny Gustafsson, Rutgers University, USA
-
Gudrun Innertsberger,
University of Munich, and Siemens, Germany
-
Frans Habraken, University of Utretch, the
Netherlands
-
Barry Harrison, Griffith University, Australia
-
Takeo Hattori, Musashi Institute of Technology,
Japan
-
Masataka Hirose, Hiroshima University, Japan
-
Sergey Kidinov, Ioffe Physico-Technical Institute,
St.Petersburg, Russia
-
Vladimir Litovchenko, Institute of Semiconductor
Physics, Kiev, Ukraine
-
Zheng-Hong Lu, Institute for Microstructural
Studies, National Research Council, Canada
-
Gerald Lucovsky, North Caroline State University,
USA
-
Gunter Luepke, Vanderbilt University, USA
-
Tatyana Makarova, Ioffe Physico-Technical
Institute, St.Petersburg,
Russia
-
Hisham Massoud, Duke University, USA
-
Alexander Mattheus,
University of Munich, and Siemens, Germany
-
Reed McFeely, IBM T.J. Watson Research Center,
USA
-
Laura Meda, EniChem, Italy
-
Christian Minot, Universite de Paris, France
-
Steven Moscowits, University of Washington,
USA
-
Jan de Nijs, DIMES - TU Delft, the
Netherlands
-
Henning Neddermeyer, Martin-Luther-University
Halle-Wittenberg, Germany
-
Vladimir Osipov, Ioffe Physico-Technical Institute,
St.Petersburg, Russia
-
Alfredo Pasquarello, IRRMA and Univ. of Geneva,
Switzerland
-
Edward Poindexter, Army Research Laboratory,
USA
-
Alexander Popov, Moscow Engineering Physics
Institute - Technical University, Russia
-
Henryk Przewlocki, Institute of Electron Technology,
Poland
-
Serge Rigo, Ministere de l'Education Nationale
& University of Paris VII, France
-
Gianguido Rizzotto, SGS Thomson Microelectronics,
Italy
-
Sergey Rogozhkin, Moscow Engineering Physics
Institute - Technical University, Russia
-
Alexander Shklyaev, Joint Research Center
for Atom Technology, Japan, and Institute of Semiconductor Physics, Novosibirsk,
Russia
-
V. Skrishevsky/V. Strikha, Kiev University,
Ukraine
-
Patrick Soukiassian, Universite de Paris-Sud/Orsay,
France
-
Andre Stesmans, University
of Leuven, Belgium
-
John Stoemenos, Aristotle
University of Thessaloniki, Greece
-
Marshall Stoneham, University College London,
United Kingdom
-
James Stathis, IBM T.J. Watson Research Center,
USA
-
Fernanda Stedile, Instituto de Quimica - UFRGS,
Brazil
-
Anna Szekeres, Bulgarian Academy of Science,
Bulgaria
-
Norman Tolk, Vanderbilt University, USA
-
Vitor Torres, Univ.
Aveiro, Portugal
-
Isabelle Tremaille, University of Paris VII,
France
-
Victor Troyan, Moscow Engineering Physics
Institute - Technical University, Russia
-
Christos Tsamis, Inst.
of Microelectronics, NCSR "Demokritos", Greece
-
Alexander Vul', Ioffe Physico-Technical Institute,
St.Petersburg, Russia