Fundamental Aspects of

Ultrathin Dielectrics on

Si-based Devices

edited by

Eric Garfunkel

Rutgers University

Piscataway, New Jersey, USA

Evgeni Gusev

Rutgers University

Piscataway, New Jersey, USA

and
Alexander Vul'

A.F. Ioffe Physico-Technical Institute of the Russian Academy of Science

St. Petersburg, Russia

Proceedings of the NATO Advanced Research Workshop on

Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices:

Towards an Atomic Scale Understanding

St. Petersburg, Russia

August 4 - 8, 1997

Kluwer Academic Publishers

Dordrecht / Boston / London

Published in cooperation with NATO Scientific Affairs Division

TABLE OF CONTENTS

Preface

Introduction

Ultrathin dielectrics in silicon microelectronics - an overview page 1

L. Feldman, E.P. Gusev and E. Garfunkel

Section 1. Recent advances in experimental studies of SiO₂ films on Si

Study of the Si/SiO₂ interface using positrons: present status and prospects 25

J.J.M. de Nijs and M. Clement

Medium energy ion scattering studies of ultrathin oxides and oxynitrides 39

E. Garfunkel, E.P. Gusev, H.C. Lu, T. Gustafsson and M.L. Green

Synchrotron and conventional photoemission studies of oxides 49

and N₂O oxynitrides

Z.-H. Lu

Stress in the SiO₂/Si structures formed by thermal oxidation 65

A. Szekeres

Section 2. Theory of the SiO₂/Si and SiO_xN_y/Si systems

Modeling the oxide and the oxidation process: can silicon oxidation be solved? 79

A.M. Stoneham and C.J. Sofield

Core-level shifts in Si(001)-SiO₂ systems: 89

the value of first-principle investigations

A. Pasquarello, M.S. Hybertsen, G.M. Rignanese and R. Car

A simple model of the chemical nature of bonds at the SiO₂/Si- interface and

its influence on the electronic properties of MOS devices 103

H.Z. Massoud

Chemical perspectives on growth and properties of ultrathin SiO₂ layers 117

G. Cerofolini and N. Re

A theoretical model of the SiO₂/Si interface 131

A. Markovits and C. Minot

Section 3: Growth mechanism, processing, and analysis of

(oxy)nitridation

Spatially-selective incorporation of bonded-nitrogen into ultrathin gate 147

dielectrics by low-temperature plasma-assisted processing

G. Lucovsky

Isotopic labeling studies of oxynitridation in nitric oxide (NO) of Si and SiO₂ 165

I. Trimaille, J.-J. Ganem, L.G. Gosset, S. Rigo, I.J.R. Baumvol, F. C. Stedile,

F. Rochet, G. Dufour and F. Jolly

Thermal routes to ultrathin oxynitrides 181

M.L. Green, D. Brasen, L.C. Feldman, E. Garfunkel, E.P. Gusev, T. Gustafsson,

W.N. Lennard, H.C. Lu, and T. Sorsch

Nitrogen in ultrathin dielectrics 191

H.B. Harrison, H.-F. Li, S.Dimitrijev and P.Tanner

Endurance of EEPROM-cells using ultrathin NO- and NH₃ nitrided tunnel oxides 217

A. Mattheus, A. Gschwandtner, G. Innertsberger, A. Grassl and A. Talg

Effects of surface deposition of nitrogen on the oxidation of silicon 227

T.D.M. Salgado, I.J.R. Baumvol, C. Radtke, C. Krug and F.C. Stedile

Section 4: Initial oxidation and surface science issues

Surface, interface and valence band of ultrathin silicon oxide 241

T. Hattori

Low temperature ultrathin dielectrics on silicon and silicon carbide surfaces: 257

from the atomic scale to interface formation

P.G. Soukiassian

Interaction of O₂ and N₂O with Si during the early stages of oxide formation 277

A.A. Shklyaev

Scanning tunneling microscopy on oxide and oxynitride formation, 289

growth and etching of Si surfaces

H. Neddermeyer, T. Doege, E. Harazim, R. Kliese, A. Kraun, R. Kulla, M. Mitte

and B. Rottger

The interaction of oxygen with Si(100) in the vicinity of the oxide 309

nucleation treshold

V.D. Borman, V.I. Troyan, Yu.Yu. Lebedinski

Section 5: Electrical properties and microscopic models of defects

Tunneling transport and reliability evaluation in extremely thin gate oxides 315

M. Hirose, Y.Mizubayashi, K. Morino, M. Fukuda and S. Miyazaki

Electrical defects at the SiO₂/Si interfaces studied by EPR 325

J. Stathis

Towards atomic scale understanding defects and traps in oxide/nitride/oxide 335

and oxynitride systems

V.A. Gritsenko

A new model of photoelectric phenomena in MOS structures: 343

outline and applications

H.M. Przewlocki

Point defect generation during Si oxidation and oxynitridation 359

C. Tsamis and D. Tsoukalas

Optically induced switching in bistable structures: heavily doped 375

n⁺ poly-silicon - tunnel oxide layer - n silicon

V.Yu. Osipov

Heterojunction Al/SiO₂/n-Si device as an Auger transistor 383

E.V. Ostroumova and A.A. Rogachev

Radiation induced behavior in MOS devices 391

V.V. Emelianov, G.I. Zebrev, O.V. Meshurov, A.V. Sogoyan and R.G. Useinov

Section 6: Hydrogen/Deuterium issues

Hydrogenous species and charge defects in the Si-SiO₂ system 397

E.H. Poindexter, C.F. Young and G.J. Gerardi

The role of hydrogen in the formation, reactivity and stability of 411

silicon (oxy)nitride films

F.H.P.M. Habraken, E.H.C. Ullersma, W.M. Arnoldbik, and A.E.T. Kuiper

Hydrogen induced donor states in the MOS system: 425

hole traps, slow traps and interface traps

J.M.M. de Nijs, K.G. Druijf and V.V. Afanas'ev

Section 7: New substrates (SiC, SiGe) and SOI technologies

Future trends in SiC-based microelectronic devices 431

A.A. Lebedev and V.E. Chelnokov

The initial phases of SiC-SiO₂ interface formation by low-temperature (300^oC) 447

remote plasma-assisted oxidation of Si and C faces of flat and vicinal 6H SiC

G. Lucovsky and H. Niimi

Challenges in the oxidation of strained SiGe layers 461

V. Craciun, J.-Y. Zhang and I. W. Boyd

The current status and future trends of SIMOX/SOI, new technological 477

applications of the SiC/SOI system

J. Stoemenos

Local tunnel emission assisted by inclusions contained in buried oxides 493

L. Meda and G.F. Cerofolini

Appendix 503

Author index
List of workshop participants