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  • rubrene crystal
  • rubrene crystal
  • rubrene single-crystal OFET
  • rubrene single-crystal OFET
  • rubrene single-crystal OFET
  • rubrene single-crystal OFET
  • rubrene single-crystal OFET
  • rubrene single-crystal OFET
  • rubrene single-crystal OFET
  • rubrene single-crystal OFET
  • 4-probe rubrene device
  • rubrene crystal
  • cross channel
  • 1-in rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene crystal
  • rubrene OFET on a fingertip
  • mol. steps in rubrene
  • STM of rubrene
  • 1st WSe2 FETs, APL 2004
  • 1st WSe2 FETs, APL 2004
  • STM on rubrene, AM 2006
  • PL of crystals, AM 2012
  • bias stress effect, PRB 2010
  • bias stress effect, AM 2012
  • SAM on rubrene, AM 2011
  • SAM on rubrene, AFM 2009
  • SAM on graphene, Nano Lett 2010
  • photocurrent oscillations, AM 2011
  • exciton diffusion, Nature M. 2010
  • instabilities in OFETs, PCCP 2012
  • low-noise Hall effect, Nature M. 2013
  • ultra-flexible OFETs, Nature Comm. 2012
  • Vitaly's 1st parylene system
  • TES-ADT film
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We are a research group based in Rutgers University Physics Department in Piscataway, New Jersey, where we study the physics of novel semiconductors. Our research tends to revolve around the following themes:

  1. Fundamentals of charge carrier transport in organic semiconductors (OFETs).
  2. The fundamental optical properties of highly ordered organic semiconductors (exciton dynamics, photo-conductivity and the photovoltaic effect).
  3. Molecular self-assembly at functional interfaces.
  4. Novel inorganic layered semiconductors (dihalcogenides and graphene).
  5. Photo-physics of hybrid (organo-inorganic) perovskites.
  6. Ionic-liquid gating of multiferroic oxides.

Watch video: High-resolution ac Hall effect measurements [video]

Watch video: Vacuum lamination approach to high-performance OFETs [video-1]

Watch video: Crystallization of TES-ADT on flexible substrates [video-2]

Fall MRS 2012, Tutorial Lecture: "Organic single crystals 101" [download file]

Latest News (click individual entry for abstract)

  1. Extended carrier lifetimes and diffusion revealed in hybrid perovskites by Hall effect. Nature Comm.
  2. Intrinsic carrier mobility in hybrid perovskites is studied across phase transitions. Advanced Mater.
  3. "Partial" carrier coherence in organic semiconductors is understood. Nature Sci. Reports.
  4. High-resolution ac-Hall effect methodology for OFETs is developed. Phys. Rev. Applied.
  5. Multi-particle interactions and non-linear photoconductivity in rubrene. Nature Sci. Reports.
  6. Ionic-liquid gating of multi-ferroic oxide SrRuO3. Nature Comm.
  7. Trap healing and very high-resolution Hall effect in org. semiconductors. Nature Mater.
  8. Extremely flexible solution-processed organic devices are demonstrated. Nature Comm.
  9. Dependence of nominal μ on VG sweep rate is revealed in disordered OFETs. PCCP
  10. Bias stress effect is measured in "air-gap" OFETs. Advanced Mater.
  11. Vacuum lamination approach to fabrication of high-performance OFETs. Advanced Mater.
  12. Origin of PL spectral variability in crystalline organic semiconductors is revealed. Advanced Mater.
  13. An amazing effect of photo-triggered diffusion of molecular oxygen in a crystalline organic semiconductor is reported. Advanced Mater.
  14. The origin of the bias-stress instability in single-crystal OFETs is revealed. Phys. Rev. B
  15. A very large exciton diffusion length (LEX ~ 3-8 μm) is observed in highly ordered organic semiconductors. Nature Mater.
  16. A molecular self-assembly of silanes on organic semiconductors is discovered. Nature Mater.
  17. D. J. Ellison from the group of Prof. D. C. Frisbie (University of Minnesota) successfully applied a Kelvin Probe Microscopy (KPM) to our SAM-rubrene system. Advanced Mater.
  18. Microscopic mechanism of SAM nucleation and growth on organic surfaces is revealed. Advanced Funct. Mater.
  19. A high-density hole-doped regime in graphene is realized by growing FTS SAM on top of the single-layer graphene FETs. Nano Lett.